Microscopy of Semiconducting Materials, 1987
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124

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Published By CRC Press

9781003069621

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TEM characterization of MBE grown Ga1–x Al x As–GaAs superlattices

Microscopy of Semiconducting Materials, 1987 ◽

10.1201/9781003069621-35 ◽

2020 ◽

pp. 213-218

Author(s):

A Poudoulec ◽

B Guenais ◽

P Auvray ◽

M Baudet ◽

A Regreny

Keyword(s):

Tem Characterization

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The simultaneous retention of resolution and layer contrast in high resolution images of GaAs/(Al,Ga)As heterostructures

Microscopy of Semiconducting Materials, 1987 ◽

10.1201/9781003069621-3 ◽

2020 ◽

pp. 15-20

Author(s):

KB Alexander ◽

CB Boothroyd ◽

EG Britton ◽

CS Baxter ◽

FM Ross ◽

...

Keyword(s):

High Resolution ◽

High Resolution Images

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Characterization of defect structures in MBE-grown (001) CdTe films by TEM and low-temperature photoluminescence

Microscopy of Semiconducting Materials, 1987 ◽

10.1201/9781003069621-24 ◽

2020 ◽

pp. 147-152

Author(s):

M.G. Burke ◽

W.J. Choyke ◽

Z.C. Feng ◽

M.H. Hanes

Keyword(s):

Low Temperature ◽

Defect Structures ◽

Low Temperature Photoluminescence

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TEM studies of heteroepitaxial CdTe and Cd x Hg1−x Te layers grown on GaAs substrates by metal-organic chemical vapour deposition

Microscopy of Semiconducting Materials, 1987 ◽

10.1201/9781003069621-23 ◽

2020 ◽

pp. 141-146

Author(s):

A G Cullis ◽

N G Chew ◽

S J C Irvine ◽

J Giess

Keyword(s):

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Organic Chemical ◽

Gaas Substrates ◽

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Defect characterization of MBE grown ZnSe/GaAs and ZnSe/Ge heterostructures by cross-sectional and planar transmission electron microscopy

Microscopy of Semiconducting Materials, 1987 ◽

10.1201/9781003069621-21 ◽

2020 ◽

pp. 129-134

Author(s):

S B Sant ◽

J Kleiman ◽

M Melech ◽

R M Park ◽

G C Weatherly ◽

...

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Defect Characterization ◽

Cross Sectional ◽

Transmission Electron

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Diffraction contrast of tilted interfaces in Ga0.7Al0.3As/GaAs heterostructures

Microscopy of Semiconducting Materials, 1987 ◽

10.1201/9781003069621-14 ◽

2020 ◽

pp. 89-94

Author(s):

U Bangert ◽

P Charsley

Keyword(s):

Diffraction Contrast

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Development of a scanning deep-level transient spectroscopy (SDLTS) system and application to well-characterised dislocations in silicon

Microscopy of Semiconducting Materials, 1987 ◽

10.1201/9781003069621-123 ◽

2020 ◽

pp. 781-786

Author(s):

R G Woodham ◽

G R Booker

Keyword(s):

Deep Level Transient Spectroscopy ◽

Transient Spectroscopy

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TED, TEM and HREM studies of atomic ordering in Al x In1−x As (x ∼ 0.5) epitaxial layers grown by organometallic vapour phase epitaxy

Microscopy of Semiconducting Materials, 1987 ◽

10.1201/9781003069621-12 ◽

2020 ◽

pp. 77-82

Author(s):

A G Norman ◽

R E Mallard ◽

I J Murgatroyd ◽

G R Booker ◽

A H Moore ◽

...

Keyword(s):

Vapour Phase ◽

Epitaxial Layers ◽

Atomic Ordering ◽

Vapour Phase Epitaxy

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EBIC diffusion length of dislocated silicon

Microscopy of Semiconducting Materials, 1987 ◽

10.1201/9781003069621-111 ◽

2020 ◽

pp. 709-714

Author(s):

A Castaldini ◽

A Cavallini ◽

D Cavalcoli

Keyword(s):

Diffusion Length

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Electrically active defects in solid phase epitaxial silicon

Microscopy of Semiconducting Materials, 1987 ◽

10.1201/9781003069621-109 ◽

2020 ◽

pp. 697-702

Author(s):

Reginald C Farrow

Keyword(s):

Solid Phase ◽

Epitaxial Silicon

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