Orders of Magnitude Reduction in Threading Dislocations in ZnO Grown on Facet-Controlled GaN
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Zno Film
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ABSTRACTZnO is grown by chemical vapour deposition on {1 1 -2 2} GaN planes formed by epitaxial layer overgrowth. Window stripes in a SiO2 mask are oriented in the <1 -1 0 0> direction of the GaN film. Triangular GaN ridge are formed during ELO growth by metal organic chemical vapour deposition. A flat (0 0 0 1) ZnO plane is grown on each triangular cross-section ridge and it is found that the ZnO film has dislocation density reduced by two orders of magnitude compared to that of the GaN substrate.
2003 ◽
Vol 20
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pp. 398-400
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2012 ◽
Vol 29
(10)
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pp. 107801
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2011 ◽
Vol 11
(9)
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pp. 8294-8301
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1992 ◽
Vol 14
(1)
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pp. 43-45
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2010 ◽
Vol 43
(14)
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pp. 145402
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1993 ◽
Vol 3
(7)
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pp. 739-742
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