Positron trapping model at dislocation without escaping

1986 ◽  
Vol 3 (5) ◽  
pp. 237-240 ◽  
Author(s):  
Xiong Liangyue (L Y Xiong)
1974 ◽  
Vol 52 (9) ◽  
pp. 759-765 ◽  
Author(s):  
B. T. A. McKee ◽  
S. Saimoto ◽  
A. T. Stewart ◽  
M. J. Stott

Measurements of positron lifetimes in cold worked copper samples show clearly positron trapping by dislocations. The copper crystals were deformed under conditions that would lead to known densities of dislocations in near random arrays and were annealed to remove other defects associated with the deformation. Using a trapping model, the data yields the value of μ = 2.9 × 1015 s−1 for the trapping rate per unit defect concentration, somewhat higher than the rate for trapping by vacancies in copper. The increase in lifetime of positrons trapped at dislocations is 34 ps (26%), about half the change for positrons trapped at vacancies in copper. A discussion of positron trapping at dislocations contrasted to vacancies emphasizes the differences arising from the extended nature of the dislocation. The theoretical picture leads to a trapping rate at dislocations roughly proportional to the binding energy.


1985 ◽  
Vol 31 (1) ◽  
pp. 15-19 ◽  
Author(s):  
W. E. Frieze ◽  
K. G. Lynn ◽  
D. O. Welch

1989 ◽  
Vol 11 (8) ◽  
pp. 1113-1121 ◽  
Author(s):  
E. Carpintero ◽  
E. Duering ◽  
A. Somoza ◽  
D. Otero ◽  
A. N. Proto

Materials ◽  
2022 ◽  
Vol 15 (1) ◽  
pp. 302
Author(s):  
Oleh Shpotyuk ◽  
Adam Ingram ◽  
Catherine Boussard-Pledel ◽  
Bruno Bureau ◽  
Zdenka Lukáčová Bujňáková ◽  
...  

The possibilities surrounding positronics, a versatile noninvasive tool employing annihilating positrons to probe atomic-deficient sub-nanometric imperfections in a condensed matter, are analyzed in application to glassy arsenoselenides g-AsxSe100−x (0 < x < 65), subjected to dry and wet (in 0.5% PVP water solution) nanomilling. A preliminary analysis was performed within a modified two-state simple trapping model (STM), assuming slight contributions from bound positron–electron (Ps, positronium) states. Positron trapping in g-AsxSe100−x/PVP nanocomposites was modified by an enriched population of Ps-decay sites in PVP. This was proven within a three-state STM, assuming two additive inputs in an overall trapping arising from distinct positron and Ps-related states. Formalism of x3-x2-CDA (coupling decomposition algorithm), describing the conversion of Ps-decay sites into positron traps, was applied to identify volumetric nanostructurization in wet-milled g-As-Se, with respect to dry-milled ones. Under wet nanomilling, the Ps-decay sites stabilized in inter-particle triple junctions filled with PVP replaced positron traps in dry-milled substances, the latter corresponding to multi-atomic vacancies in mostly negative environments of Se atoms. With increased Se content, these traps were agglomerated due to an abundant amount of Se-Se bonds. Three-component lifetime spectra with nanostructurally- and compositionally-tuned Ps-decay inputs and average lifetimes serve as a basis to correctly understand the specific “rainbow” effects observed in the row from pelletized PVP to wet-milled, dry-milled, and unmilled samples.


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