Negative Effects of Annealed Seed Layer on the Performance of ZnO-Nanorods Based Nitric Oxide Gas Sensor

Nitric oxide (NO) is a toxic gas, which is dangerous for human health and causes many respiratory infections, poisoning, and lung damage. In this work, we have successfully grown ZnO nanorod film on annealed ZnO seed layer in different ambient temperatures, and the morphology of the nanorods sensing layer that affects the gas sensing response to nitric oxide (NO) gas were investigated. To acknowledge the effect of annealing treatment, the devices were fabricated with annealed seed layers in air and argon ambient at 300 °C and 500 °C for 1 h. To simulate a vertical device structure, a silver nanowire electrode covered in ZnO nanorod film was placed onto the hydrothermal grown ZnO nanorod film. We found that annealing treatment changes the seed layer’s grain size and defect concentration and is responsible for this phenomenon. The I–V and gas sensing characteristics were dependent on the oxygen defects concentration and porosity of nanorods to react with the target gas. The resulting as-deposited ZnO seed layer shows better sensing response than that annealed in an air and argon environment due to the nanorod morphology and variation in oxygen defect concentration. At room temperature, the devices show good sensing response to NO concentration of 10 ppb and up to 100 ppb. Shortly, these results can be beneficial in the NO breath detection for patients with chronic inflammatory airway disease, such as asthma.

Modelling electroforming process under constant bias voltage conditions

In order to understand changes in defect concentration during the electroforming process, we modelled the electroforming process in Ta/HfO2/Pt under constant bias voltage. For this purpose, kinetic Monte-Carlo and finite element methods were utilized. Vacancy profiles were obtained for forming voltages from 3 V to 5 V; modelling of lower stresses is time-consuming. It was found that with decreasing voltage, vacancies begin to accumulate near the inert electrode. When the voltage was dropped from 5 to 3 V, the thickness of such a layer increased by 1 nm, and electroforming time exponentially increase.

Fatigue and its effect on the piezopotential properties of gallium nitride nanowires

The gallium nitride (GaN) nanowires (NWs) in piezotronic applications are usually under cyclic loading, which thus may inevitably suffer the mechanical fatigue. In this paper, the fatigue behaviours of defective GaN NWs are investigated by using molecular dynamics (MD) simulations. Our results show no significant changes in the molecular structures of GaN NWs until their final failure during the fatigue process. The final fracture occurring in the GaN NWs under fatigue loading is triggered by the crack that unusually initiates from the NW surface. The GaN NW with a smaller defect concentration or under the fatigue load with a smaller amplitude is found to possess a longer fatigue life. In addition, the ultimate fatigue strain of GaN NWs can be significantly increased by reducing the defect concentration of NWs. The material parameters including elastic constants, piezoelectric coefficients, and dielectric constants of GaN NWs in the fatigue test are evaluated through MD simulations, all of which are found to keep almost unchanged during the fatigue process. These material parameters together with the band gaps of GaN NWs extracted from first-principles calculations are employed in finite element calculations to investigate the piezopotential properties of GaN NWs under fatigue loading. No significant changes are found in the piezopotential properties of GaN NWs during the fatigue process, which indicates the long-term dynamic reliability of GaN NWs in piezotronic applications.

Defect concentration and Δn change in light- and elevated temperature- induced degradation

The wide variety of silicon materials used by various groups to investigate LeTID make it difficult to directly compare the defect concentrations (Nt) using the typical normalised defect density (NDD) metric. Here, we propose a new formulation for a relative defect concentration (β) as a correction for NDD that allows flexibility to perform lifetime analysis at arbitrary injection levels (Δn), away from the required ratio between Δn and the background doping density (Ndop) for NDD of Δn/N dop = 0.1. As such, β allows for a meaningful comparison of the maximum degradation extent between different samples in different studies and also gives a more accurate representative value to estimate the defect concentration. It also allows an extraction at the cross-over point in the undesirable presence of iron, or flexibility to reduce the impact of modulation in surface passivation. Although the accurate determination of β at a given Δn requires knowledge of the capture cross-section ratio (k), the injection-independent property of the β formulation allows a self-consistent determination of k. Experimental verification is also demonstrated for boron-oxygen related defects and LeTID defects, yielding k-values of 10.6 ± 3.2 and 30.7 ± 4.0, respectively, which are within the ranges reported in the literature. With this, when extracting the defect density at different Δn ranging between 1014 /cm3 to 1015 /cm3 with Ndop = 9.1 ×1015 /cm3, the error is less than 12% using β, allowing for a greatly improved understanding of the defect concentration in a material.

Simulating the Performance of a Formamidinium Based Mixed Cation Lead Halide Perovskite Solar Cell

With the aim of decreasing the number of experiments to obtain a perovskite solar cell (PSC) with maximum theoretical efficiency, in this paper, PSC performance was studied using the program solar cell capacitance simulator (SCAPS-1D). The PSC with the architecture ITO/TiO2/perovskite/spiro-MeOTAD/Au was investigated, while the selected perovskite was mixed cation Rb0.05Cs0.1FA0.85PbI3. The analysis was based on an experimentally prepared solar cell with a power conversion efficiency of ~7%. The PSC performance, verified by short-circuit current density (Jsc), open-circuit voltage (Voc), fill factor (FF) and power conversion efficiency (PCE), was studied by optimization of the simulation parameters responsible for improvement of the cell operation. The optimized parameters were absorber layer thickness, doping, defect concentration and the influence of the resistivity (the net effect of ohmic loss, Rs and the leakage current loss represented by the resistivity, Rshunt). The results of SCAPS-1D simulations estimated the theoretical power conversion efficiency of 15% for our material. We have showed that the main contribution to improvement of solar cell efficiency comes with lowering ohmic resistivity of the cell as well as doping and defect concentration, because their concentration is proportional to recombination rate.

Influence of Surfacing Modes on the Formation of Pores in the Deposited Metal Produced by Wire Arc Additive Method (WAAM) Using Al-Mg Alloy

This paper presents studies about the influence of the surfacing mode on the formation of defects in the deposited metal produced by WAAM using Al-Mg alloy. As the main parameters that affected on the surfacing mode were the travel speed and the frequency of current pulses. Graphs about an influence of the travel speed on a size of pores and an influence the frequency of current pulses on a specific area of pores were constructed. It was concluded that with increasing of the surfacing speed, the size of defects decreased. Increasing the frequency of current pulses affected on increasing the specific area of pores. Changing the frequency of the current pulses leads to a change in the metal transfer. When using large-drop transfer metal, the defect concentration is minimal, but when using small-drop transfer, the arc stability decreases, which contributes to a higher pore concentration in the deposited metal.