Polar interface optical phonon modes and Fröhlich electron–phonon interaction Hamiltonians in wurtzite quantum well wires

2005 ◽  
Vol 20 (6) ◽  
pp. 592-600 ◽  
Author(s):  
Li Zhang ◽  
Jun-jie Shi
Keyword(s):  
Quantum Well ◽  
Optical Phonon ◽  
Phonon Modes ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Quantum Well Wires

TRANSFER MATRIX METHOD FOR THE FRÖHLICH ELECTRON–INTERFACE OPTICAL PHONON INTERACTION IN MULTILAYER COAXIAL CYLINDRICAL QUANTUM-WELL WIRES

2004 ◽  
Vol 18 (03) ◽  
pp. 379-393 ◽  
Author(s):  
LI ZHANG ◽  
HONG-JING XIE
Keyword(s):  
Quantum Well ◽  
Transfer Matrix ◽  
Transfer Matrix Method ◽  
Matrix Method ◽  
Continuum Approximation ◽  
Phonon Modes ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Quantum Well Wire ◽  
Quantum Well Wires

Under dielectric continuum approximation, by adopting the transfer matrix method, interface optical (IO) phonon modes and the Fröhlich electron–IO-phonon interaction Hamiltonian in a multilayer coaxial cylindrical quantum-well wire (QWW) were deduced and investigated. Numerical calculations on a four-layer GaAs / Al x Ga 1-x As QWW have been performed. Results reveal that there are six branches of IO phonon modes. When the wave vector in z-direction kz and the azimuthal quantum number m are small, the dispersion frequencies of IO modes sensitively depend on kz and m. When kz and m are relatively large, with the increasing of kz and m, the frequency for each mode converges the limit frequency value of IO mode in single heterostructure, and the electrostatic potential distribution of each mode tends to be more and more localized at the interfaces, meanwhile, the coupling between the electron–IO-phonon becomes weaker and weaker. The calculation also shows that the phonon modes with higher frequencies have more significant contribution to the electron–phonon interaction. At last, it is found that kz and m have analogous effects on the frequencies and the electrostatic potentials of the IO phonons.

Optical-phonon modes and electron-phonon interaction in arbitrary semiconductor planar microcavities

1999 ◽  
Vol 60 (23) ◽  
pp. 16031-16038 ◽  
Author(s):  
Jun-jie Shi ◽  
B. C. Sanders ◽  
Shao-hua Pan ◽  
E. M. Goldys
Keyword(s):  
Optical Phonon ◽  
Phonon Modes ◽  
Phonon Interaction ◽  
Electron Phonon Interaction

Polaronic Effects in Wurtzite InxGa1-xN/GaN Parabolic Quantum Well

2012 ◽  
Vol 629 ◽  
pp. 145-151
Author(s):  
Ren Tu Ya Wu ◽  
Qi Zhao Feng
Keyword(s):  
Quantum Well ◽  
Ground State Energy ◽  
Optical Phonon ◽  
Ground State ◽  
State Energy ◽  
Transition Energy ◽  
Energy Levels ◽  
Phonon Modes ◽  
Phonon Interaction ◽  
Zinc Blende

The energy levels of polaron in a wurtzite InxGa1-xN/GaN parabolic quantum well are investigated by adopting a modified Lee-Low-Pines variational method. The ground state energy, the transition energy and the contributions of different branches of optical phonon modes to the ground state energy as functions of the well width are given. The effects of the anisotropy of optical phonon modes and the spatial dependence effective mass, dielectric constant, phonon frequency on energy levels are considered in calculation. In order to compare, the corresponding results in zinc-blende parabolic quantum well are given. The results indicate that the contributions of the electron-optical phonon interaction to ground state energy of polaron in InxGa1-xN/GaN is very large, and make the energy of polaron reduces. For a narrower quantum well，the contributions of half-space optical phonon modes is large , while for a wider one, the contributions of the confined optical phonon modes are larger. The ground state energy and the transition energy of polaron in wurtzite InxGa1-xN/GaN are smaller than that of zinc-blende InxGa1-xN/GaN, and the contributions of the electron-optical phonon interaction to ground state energy of polaron in wurtzite InxGa1-xN/GaN are greater than that of zinc-blende InxGa1-xN/GaN. The contributions of the electron-optical phonon interaction to ground state energy of polaron in wurtzite InxGa1-xN/GaN (about from 22 to 32 meV) are greater than that of GaAs/AlxGa1-xAs parabolic quantum well (about from 1.8 to 3.2 meV). Therefore, the electron-optical phonon interaction should be considered for studying electron state in InxGa1-xN/GaN parabolic quantum well.

DISPERSIONS AND FRÖHLICH ELECTRON–PHONON INTERACTION HAMILTONIAN OF PROPAGATING OPTICAL PHONON MODES IN QUASI-ONE-DIMENSIONAL WURTZITEGaN-BASED QUANTUM WELL WIRES

2007 ◽  
Vol 14 (05) ◽  
pp. 903-910 ◽  
Author(s):  
L. ZHANG ◽  
HONG-JING XIE
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Optical Phonon ◽  
Detailed Comparison ◽  
Continuous Functions ◽  
Uniaxial Crystal ◽  
Phonon Modes ◽  
Phonon Interaction ◽  
One Dimensional ◽  
Quantum Well Wire

Based on the dielectric continuum model and Loudon's uniaxial crystal model, the propagating (PR) optical phonon modes and the Fröhlich-like electron–PR phonon interaction Hamiltonian in a quasi-one-dimensional (Q1D) wurtzite quantum well wire (QWW) structure are deduced and analyzed. Numerical calculations on AlGaN / GaN / AlGaN wurtzite QWW are performed. Results reveal that the dispersive frequencies of PR modes are the continuous functions of free wavenumber kzin z-direction and discrete functions of azimuthal quantum number m. The reduced behavior of the PR modes in wurtzite quantum systems is obviously observed. From the discussion of the electron–PR phonon coupling functions, it is found that the low-order PR modes in the case of small kzand m play a more important role in the electron–PR phonon interactions. Moreover, a detailed comparison of the PR modes in Q1D QWW structures with those in quasi-two-dimensional quantum wells are also carried out. The physical reasons resulting in the relationship and distinction in the two types of systems are also analyzed deeply.

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