Influence of impurity-free vacancy diffusion on the optical and optoelectronic properties of the In0.53Ga0.47As/In0.52Al0.48As multiple quantum wells electroabsorption modulator structure

2005 ◽  
Vol 20 (8) ◽  
pp. 851-855
Author(s):  
J S Yu ◽  
J D Song ◽  
Y T Lee ◽  
H Lim
Keyword(s):  
Quantum Wells ◽  
Optoelectronic Properties ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Vacancy Diffusion ◽  
Electroabsorption Modulator ◽  
Modulator Structure ◽  
Free Vacancy

Electronic structure and optoelectronic properties of strained InAsSb∕GaSb multiple quantum wells

2005 ◽  
Vol 87 (18) ◽  
pp. 181911 ◽  
Author(s):  
Thomas Koprucki ◽  
Michael Baro ◽  
Uwe Bandelow ◽  
Tran Q. Tien ◽  
Fritz Weik ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Quantum Wells ◽  
Optoelectronic Properties ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

Optoelectronic properties of ZnO/ZnMgO multiple quantum wells in ZnMgO nanocolumns grown on Si (111)

2017 ◽  
Vol 717 ◽  
pp. 41-47 ◽  
Author(s):  
M.A. Pietrzyk ◽  
E. Placzek-Popko ◽  
K.M. Paradowska ◽  
E. Zielony ◽  
M. Stachowicz ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optoelectronic Properties ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

Growth, optical, and optoelectronic properties of CdZnTe/ZnTe multiple quantum wells

1992 ◽  
Vol 17 (5) ◽  
pp. 477-505 ◽  
Author(s):  
R. D. Feldman ◽  
D. Lee ◽  
A. Patfovi ◽  
R. P. Stanley ◽  
A. M. Johnson ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optoelectronic Properties ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

Design of electroabsorption modulator based on Ge/SiGe multiple quantum wells, integrated on SOI waveguides

2013 ◽  
Author(s):  
Mohamed Said Rouifed ◽  
Papichaya Chaisakul ◽  
Delphine Marris-Morini ◽  
Jacopo Frigerio ◽  
Giovanni Isella ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Electroabsorption Modulator

Modulator Structure Using In(As, P)/lnP Strained Multiple Quantum Wells Grown By Gas-Source MBE

1991 ◽  
Vol 228 ◽  
Author(s):  
H. Q. Hou ◽  
T. P. Chin ◽  
B. W. Liang ◽  
C. W Tu
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Material System ◽  
Gas Source ◽  
Transmission Electron ◽  
Wide Range ◽  
Excitonic Emission ◽  
Modulator Structure ◽  
Gas Source Mbe

ABSTRACTIn(As, P)/InP strained multiple quantum wells (SMQW's) were grown with gas-source molecular-beam epitaxy (GSMBE). A successful control of the As composition was achieved over a wide range by using two techniques. High-quality samples were characterized structurally and optically by x-ray diffractometry, transmission electron microscopy (TEM), photoluminescence (PL) and absorption measurements. Excitonic emission energy and the critical layer thickness of In(As, P)/InP SMQW's are calculated as a function of the As composition. The results show that 1.06, 1.3 and 1.55 μm excitonic emission can be achieved at room temperature using this material system. We also discuss the perspective of using In(As, P)/InP SMQW's for modulator application.

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