scholarly journals Anisotropic universal conductance fluctuations in disordered quantum wires with Rashba and Dresselhaus spin–orbit interaction and an applied in-plane magnetic field

2009 ◽  
Vol 24 (6) ◽  
pp. 064005 ◽  
Author(s):  
Matthias Scheid ◽  
İnanç Adagideli ◽  
Junsaku Nitta ◽  
Klaus Richter
Keyword(s):  
Magnetic Field ◽  
Quantum Wires ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Universal Conductance Fluctuations ◽  
Conductance Fluctuations ◽  
Universal Conductance

scholarly journals Universal conductance fluctuations and phase-coherent transport in a semiconductor Bi2O2Se nanoplate with strong spin–orbit interaction

Nanoscale ◽  
2019 ◽  
Vol 11 (22) ◽  
pp. 10622-10628 ◽  
Author(s):  
Mengmeng Meng ◽  
Shaoyun Huang ◽  
Congwei Tan ◽  
Jinxiong Wu ◽  
Xiaobo Li ◽  
...  
Keyword(s):  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Coherent Transport ◽  
Universal Conductance Fluctuations ◽  
Conductance Fluctuations ◽  
Universal Conductance ◽  
First Time ◽  
Strong Spin

Universal conductance fluctuations and spin–orbit interaction induced reduction in fluctuation amplitudes have been observed for the first time in the magnetotransport measurements of a Bi2O2Se nanoplate.

Spin generation and manipulation based on spin-orbit interaction in semiconductors

2017 ◽  
Author(s):  
J. Nitta
Keyword(s):  
Magnetic Field ◽  
Orbit Interaction ◽  
Degree Of Freedom ◽  
Effective Magnetic Field ◽  
Spin Orbit ◽  
Spin Orbit Interaction ◽  
Spin Degree ◽  
Dimensional Electron Gas ◽  
Spin Orbit Interactions ◽  
Electrical Generation

This chapter focuses on the electron spin degree of freedom in semiconductor spintronics. In particular, the electrostatic control of the spin degree of freedom is an advantageous technology over metal-based spintronics. Spin–orbit interaction (SOI), which gives rise to an effective magnetic field. The essence of SOI is that the moving electrons in an electric field feel an effective magnetic field even without any external magnetic field. Rashba spin–orbit interaction is important since the strength is controlled by the gate voltage on top of the semiconductor’s two-dimensional electron gas. By utilizing the effective magnetic field induced by the SOI, spin generation and manipulation are possible by electrostatic ways. The origin of spin-orbit interactions in semiconductors and the electrical generation and manipulation of spins by electrical means are discussed. Long spin coherence is achieved by special spin helix state where both strengths of Rashba and Dresselhaus SOI are equal.

Symmetry crossover in quantum wires with spin-orbit interaction

2010 ◽  
Vol 81 (15) ◽  
Author(s):  
Tomoaki Kaneko ◽  
Mikito Koshino ◽  
Tsuneya Ando
Keyword(s):  
Quantum Wires ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Spin Orbit Interaction
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