Hot-electron energy relaxation rates in GaAs/GaAlAs quantum wells

1989 ◽  
Vol 4 (10) ◽  
pp. 852-857 ◽  
Author(s):  
N Balkan ◽  
B K Ridley ◽  
M Emeny ◽  
I Goodridge
2018 ◽  
Vol 17 (06) ◽  
pp. 1850010
Author(s):  
Ankur Pandya ◽  
Prafulla K. Jha

The electron transport parameters such as electron energy relaxation rate and phonon limited electron resistivity for iron (transition metal) doped 2D nanoribbons of armchair graphene nanoribbon (aGNR) and h-boron nitride nanoribbon (h-BNNR) have been calculated via hot electron acoustical phonon interactions on the basis of acoustical deformation potential (ADP) coupling mechanism. We have performed the investigation for the lower concentration ([Formula: see text]%) of iron doping under the influence of externally applied magnetic field at low temperature to room temperature regime. The hot electron acoustical phonon relaxation rates are observed with electric field and under constant applied magnetic field. The doping of iron increases the electron energy relaxation rate with respect to their pristine counter parts. Moreover, the pristine h-BNNR exhibits less electron energy relaxation rate with respect to pristine aGNR. Upon applying magnetic field on Fe doped armchair GNR as well as Fe-doped h-BNNR the electron energy relaxation rate reduces down to a considerable extent with respect to their pristine counterparts. Moreover, under the impact of magnetic field, the acoustical phonon restricted electrical resistivity of Fe-doped GNR is considerably low compared to pristine GNR.


1987 ◽  
Vol 26 (S3-1) ◽  
pp. 761 ◽  
Author(s):  
P. M. Echternach ◽  
L. J. Friedman ◽  
C. M. Gould ◽  
H. M. Bozler ◽  
J. T. Cheung

2008 ◽  
Vol 23 (7) ◽  
pp. 075048 ◽  
Author(s):  
A Matulionis ◽  
J Liberis ◽  
E Šermukšnis ◽  
J Xie ◽  
J H Leach ◽  
...  

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