Hot-electron energy relaxation time in AlInN/AlN/GaN 2DEG channels

2008 ◽  
Vol 23 (7) ◽  
pp. 075048 ◽  
Author(s):  
A Matulionis ◽  
J Liberis ◽  
E Šermukšnis ◽  
J Xie ◽  
J H Leach ◽  
...  
Keyword(s):  
Relaxation Time ◽  
Electron Energy ◽  
Energy Relaxation ◽  
Hot Electron ◽  
Energy Relaxation Time

Hot-electron energy relaxation time in AlGaN/GaN

2002 ◽  
Vol 17 (3) ◽  
pp. L9-L14 ◽  
Author(s):  
A Matulionis ◽  
J Liberis ◽  
L Ardaravicius ◽  
M Ramonas ◽  
I Matulioniene ◽  
...  
Keyword(s):  
Relaxation Time ◽  
Electron Energy ◽  
Energy Relaxation ◽  
Hot Electron ◽  
Energy Relaxation Time

Hot-electron energy relaxation time in Ga-doped ZnO films

2015 ◽  
Vol 117 (6) ◽  
pp. 065704 ◽  
Author(s):  
E. Šermukšnis ◽  
J. Liberis ◽  
M. Ramonas ◽  
A. Matulionis ◽  
M. Toporkov ◽  
...  
Keyword(s):  
Relaxation Time ◽  
Electron Energy ◽  
Energy Relaxation ◽  
Zno Films ◽  
Hot Electron ◽  
Energy Relaxation Time ◽  
Doped Zno

scholarly journals Hot electron energy relaxation time in vanadium nitride superconducting film structures under THz and IR radiation

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Ivan Pentin ◽  
Yury Vakhtomin ◽  
Vitaly Seleznev ◽  
Konstantin Smirnov
Keyword(s):  
Relaxation Time ◽  
Electron Energy ◽  
Energy Relaxation ◽  
Superconducting Film ◽  
Vanadium Nitride ◽  
Resistive State ◽  
Quasi Equilibrium ◽  
Hot Electron ◽  
Ir Radiation ◽  
Energy Relaxation Time

Abstract The paper presents the experimental results of studying the dynamics of electron energy relaxation in structures made of thin (d ≈ 6 nm) disordered superconducting vanadium nitride (VN) films converted to a resistive state by high-frequency radiation and transport current. Under conditions of quasi-equilibrium superconductivity and temperature range close to critical (~ Tc), a direct measurement of the energy relaxation time of electrons by the beats method arising from two monochromatic sources with close frequencies radiation in sub-THz region (ω ≈ 0.140 THz) and sources in the IR region (ω ≈ 193 THz) was conducted. The measured time of energy relaxation of electrons in the studied VN structures upon heating of THz and IR radiation completely coincided and amounted to (2.6–2.7) ns. The studied response of VN structures to IR (ω ≈ 193 THz) picosecond laser pulses also allowed us to estimate the energy relaxation time in VN structures, which was ~ 2.8 ns and is in good agreement with the result obtained by the mixing method. Also, we present the experimentally measured volt-watt responsivity (S~) within the frequency range ω ≈ (0.3–6) THz VN HEB detector. The estimated values of noise equivalent power (NEP) for VN HEB and its minimum energy level (δE) reached NEP@1MHz ≈ 6.3 × 10–14 W/√Hz and δE ≈ 8.1 × 10–18 J, respectively.

Electron energy relaxation time in Si and Ge

1973 ◽  
Vol 34 (3) ◽  
pp. 547-564 ◽  
Author(s):  
M. Costato ◽  
S. Fontanesi ◽  
L. Reggiani
Keyword(s):  
Relaxation Time ◽  
Electron Energy ◽  
Energy Relaxation ◽  
Energy Relaxation Time

Hot-electron energy relaxation rates in GaAs/GaAlAs quantum wells

1989 ◽  
Vol 4 (10) ◽  
pp. 852-857 ◽  
Author(s):  
N Balkan ◽  
B K Ridley ◽  
M Emeny ◽  
I Goodridge
Keyword(s):  
Quantum Wells ◽  
Electron Energy ◽  
Energy Relaxation ◽  
Hot Electron ◽  
Relaxation Rates
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