Absorption coefficient and electric-field-induced localization in InAs-AlGaSb multi-quantum well structures

1994 ◽  
Vol 9 (12) ◽  
pp. 2210-2216 ◽  
Author(s):  
K B Wong ◽  
G K A Gopir ◽  
J P Hagon ◽  
M Jaros
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Absorption Coefficient ◽  
Quantum Well Structures ◽  
Multi Quantum Well

InGaN∕GaN multi-quantum-well structures on (111)-oriented bonded silicon-on-insulator substrates

2005 ◽  
Vol 87 (11) ◽  
pp. 111908 ◽  
Author(s):  
L. S. Wang ◽  
S. Tripathy ◽  
S. J. Chua ◽  
K. Y. Zang
Keyword(s):  
Quantum Well ◽  
Silicon On Insulator ◽  
Quantum Well Structures ◽  
Multi Quantum Well

Effects of reduced internal electric field in InGaN/pseudo-AlInGaN multi-quantum-well on forward leakage current and photocurrent properties

2019 ◽  
Vol 126 (4) ◽  
pp. 045703 ◽  
Author(s):  
Byung-Guon Park ◽  
Reddeppa Maddaka ◽  
Thi Kim Phung Nguyen ◽  
Koteswara Rao Peta ◽  
Young-Kyun Noh ◽  
...  
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Leakage Current ◽  
Internal Electric Field ◽  
Multi Quantum Well
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