Electron-phonon interaction function for metals from the temperature dependence of the electrical resistivity

Abstract We report the temperature dependence of the dielectric function ε = ε1 + iε2 and critical point (CP) energies of biaxial α-SnS in the spectral energy region from 0.74 to 6.42 eV and temperatures from 27 to 350 K using spectroscopic ellipsometry. Bulk SnS was grown by temperature gradient method. Dielectric response functions were obtained using multilayer calculations to remove artifacts due to surface roughness. We observe sharpening and blue-shifting of CPs with decreasing temperature. A strong exciton effect is detected only in the armchair direction at low temperature. New CPs are observed at low temperature that cannot be detected at room temperature. The temperature dependences of the CP energies were determined by fitting the data to the phenomenological expression that contains the Bose–Einstein statistical factor and the temperature coefficient for describing the electron–phonon interaction.

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Electron-phonon interaction function in the layered dichalcogenide 2Ha-TaSe2

Low Temperature Physics ◽

10.1063/1.3170929 ◽

2009 ◽

Vol 35 (7) ◽

pp. 539-543 ◽

Cited By ~ 1

Author(s):

G. V. Kamarchuk ◽

A. V. Khotkevich ◽

A. V. Savitskiĭ ◽

P. Molinié ◽

A. Leblanc ◽

...

Keyword(s):

Phonon Interaction ◽

Interaction Function ◽

Electron Phonon Interaction

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Temperature dependence of band gaps in semiconductors: Electron-phonon interaction

Physical Review B ◽

10.1103/physrevb.86.195208 ◽

2012 ◽

Vol 86 (19) ◽

Cited By ~ 66

Author(s):

J. Bhosale ◽

A. K. Ramdas ◽

A. Burger ◽

A. Muñoz ◽

A. H. Romero ◽

...

Keyword(s):

Temperature Dependence ◽

Band Gaps ◽

Phonon Interaction ◽

Electron Phonon Interaction

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POINT-CONTACT SPECTROSCOPY OF THE ELECTRON-PHONON INTERACTION IN SmNi5

International Journal of Modern Physics B ◽

10.1142/s0217979293000500 ◽

1993 ◽

Vol 07 (01n03) ◽

pp. 226-229 ◽

Cited By ~ 1

Author(s):

M. REIFFERS ◽

P. SZABO ◽

D. GIGNOUX ◽

D. SCHMITT

Keyword(s):

Field Effect ◽

Point Contact ◽

Magnetic Field Effect ◽

Second Derivative ◽

Phonon Interaction ◽

Energy Position ◽

Interaction Function ◽

Electron Phonon Interaction ◽

Point Contact Spectroscopy ◽

The Magnetic Field

The measured point-contact (PC) spectra of the heterocontact between oriented hexagonal single crystal of SmNi 5 and Cu in ballistic and thermal regime are presented. The PC spectrum (the second derivative of I–V characteristic - d 2 I/dV 2( eV )) is directly proportional to the electron-quasiparticle interaction (EQI) function. The absence of the magnetic field effect on the energy position of the characteristic peaks until 10T is the confirmation of the phonon origin. The phonon part of the EQI function is similar to the electron-phonon interaction function for LaNi 5.

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THE TEMPERATURE DEPENDENCE OF THE ENERGY LEVELS OF SHALLOW DONOR IMPURITIES IN SILICON

Canadian Journal of Physics ◽

10.1139/p67-107 ◽

1967 ◽

Vol 45 (4) ◽

pp. 1421-1438 ◽

Cited By ~ 8

Author(s):

C. Y. Cheung ◽

Robert Barrie

Keyword(s):

Temperature Dependence ◽

Energy Levels ◽

Electronic States ◽

Shallow Donor ◽

Phonon Interaction ◽

Electron Phonon Interaction ◽

Doped Silicon ◽

Phosphorus Doped

A calculation is made of the temperature dependence of the energy levels of shallow donor impurities in silicon. This temperature dependence arises from the electron–phonon interaction and we consider mixing only of the {1s}, {2s), and {2p0} electronic states. A comparison is made with experiment for the case of phosphorus-doped silicon.

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