The spectroscopy of metal atoms trapped in low-temperature matrices of the inert gases: Indium

1967 ◽  
Vol 92 (3) ◽  
pp. 830-838-3 ◽  
Author(s):  
W W Duley ◽  
W R S Garton
Keyword(s):  
Low Temperature ◽  
Inert Gases ◽  
Metal Atoms

scholarly journals Variation characteristics of active groups and macroscopic gas products during low-temperature oxidation of coal under the action of inert gases N2 and CO2

Fuel ◽  
2022 ◽  
Vol 307 ◽  
pp. 121893
Author(s):  
Buzhuang Zhou ◽  
Shengqiang Yang ◽  
Wenming Yang ◽  
Xiaoyuan Jiang ◽  
Wanxin Song ◽  
...  
Keyword(s):  
Low Temperature ◽  
Inert Gases ◽  
Low Temperature Oxidation ◽  
Temperature Oxidation ◽  
Variation Characteristics ◽  
Gas Products

Low-Temperature Diffusion of Transition Metals at the Presence of Radiation Defects in Silicon

2011 ◽  
Vol 178-179 ◽  
pp. 421-426
Author(s):  
Jan Vobecký ◽  
Volodymyr Komarnitskyy ◽  
Vít Záhlava ◽  
Pavel Hazdra
Keyword(s):  
Low Temperature ◽  
Active Sites ◽  
Carrier Lifetime ◽  
High Energy ◽  
Deep Levels ◽  
Radiation Defects ◽  
Metal Atoms ◽  
Temperature Diffusion ◽  
Concentration Enhancement ◽  
Application Potential

Low-temperature diffusion of Cr, Mo, Ni, Pd, Pt, and V in silicon diodes is compared in the range 450 - 800 oC. Before the diffusion, the diodes were implanted with high-energy He2+ to assess, if the radiation defects enhance the concentration of metal atoms at electrically active sites and what is the application potential for carrier lifetime control. The devices were characterized using AES, XPS, DLTS, OCVD carrier lifetime and diode electrical parameters. The metal atoms are divided into two groups. The Pt, Pd and V form deep levels in increased extent at the presence of radiation defects above 600 oC, which reduces the excess carrier lifetime. It is shown as a special case that the co-diffusion of Ni and V from a NiV surface layer results fully in the concentration enhancement of the V atoms. The enhancement of the acceptor level V-/0 (EC 0.203 eV) and donor level V0/+ (EC 0.442 eV) resembles the behavior of substitutional Pts. The second group is represented by the Mo and Cr. They easily form oxides, which can make their diffusion into a bulk more difficult or impossible. Only a slight enhancement of the Cr-related deep levels by the radiation defects has been found above 700 oC.

Low-temperature reactions of metal atoms with methyl bromide

1982 ◽  
Vol 104 (4) ◽  
pp. 1013-1016 ◽  
Author(s):  
Yasutaka Tanaka ◽  
Stephen C. Davis ◽  
Kenneth J. Klabunde
Keyword(s):  
Low Temperature ◽  
Methyl Bromide ◽  
Metal Atoms
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