Free-carrier absorption in semiconducting quantum wells for alloy-disorder scattering

2002 ◽  
Vol 14 (19) ◽  
pp. 4977-4983 ◽  
Author(s):  
G B Ibragimov
Keyword(s):  
Quantum Wells ◽  
Free Carrier ◽  
Free Carrier Absorption ◽  
Carrier Absorption ◽  
Alloy Disorder ◽  
Disorder Scattering

Free carrier absorption in semiconducting quantum wells for confined LO phonon scattering

1992 ◽  
Vol 72 (10) ◽  
pp. 4966-4968 ◽  
Author(s):  
J. S. Bhat ◽  
S. S. Kubakaddi ◽  
B. G. Mulimani
Keyword(s):  
Quantum Wells ◽  
Phonon Scattering ◽  
Free Carrier ◽  
Free Carrier Absorption ◽  
Carrier Absorption

Free Carrier Absorption due to Dislocation Scattering in GaN Quantum Wells

2011 ◽  
Author(s):  
R. G. Vaidya ◽  
N. S. Sankeshwar ◽  
B. G. Mulimani ◽  
P. Predeep ◽  
Mrinal Thakur ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Free Carrier ◽  
Free Carrier Absorption ◽  
Carrier Absorption

scholarly journals ON THE POSSIBILITY OF AN INTERSUBBAND LASER IN SILICON-ON-INSULATOR

2006 ◽  
Vol 16 (02) ◽  
pp. 411-420
Author(s):  
SERGE LURYI ◽  
ALEX ZASLAVSKY
Keyword(s):  
Quantum Wells ◽  
Lateral Diffusion ◽  
Optical Loss ◽  
Free Carrier ◽  
Silicon On Insulator ◽  
Free Carrier Absorption ◽  
Loss Mechanism ◽  
Polysilicon Gate ◽  
Carrier Absorption ◽  
Intersubband Relaxation

As thin Si quantum wells with oxide barriers have become an experimental reality in silicon-on-insulator technology, we discuss the feasibility of a terahertz laser based on an intersubband transition in such a Si quantum well. Electrons tunnel into an upper two-dimensional subband from a thin polysilicon gate through an ultrathin tunneling oxide and are extracted laterally from the Si well by diffusion. Population inversion arises because lateral diffusion to the contacts can be a faster process than intersubband relaxation and also because the in-plane diffusivity in the upper subband is suppressed by the interaction with a nearby subband characterized by a heavy in-plane mass. Thick oxide layers provide optical confinement and the main optical loss mechanism is the weak free-carrier absorption in thin doped regions in the polysilicon gate and substrate. A voltage on the substrate may provide some tunability of the gain peak.

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