Nonlinear loss characterization of continuous wave guiding in silicon wire waveguides

Accurate propagation loss characterization of silicon waveguides is increasingly demanded for silicon-photonics-(Si-Ph) applications with high-power continuous-wave-(CW) light sources. We report on nonlinear loss parameters of silicon wire waveguides for 1.31-μm-wavelength CW light extracted from transmission data measured for different lengths and polarizations. Such parameters were, so far, unavailable, although they are required for accurately modeling Si-Ph optical circuits. More-than-ten-times enhancement of two-photon absorption from prior results for short pulse light was observed at power densities ranging up to 4.7×1011 W/m2 while free carrier absorption was suppressed. We estimate the nonlinear loss of the waveguide using the parameter values obtained

Ultrafast Broadband Nonlinear Optical Response in Co-Doped Sb2Se3 Nanofilms at Near-Infrared

Transition metal-doped Sb2Se3 has become a heated topic caused by the strong nonlinear optical response and the ultrafast response time at high laser excitation. In this paper, the Co-doped Sb2Se3 with different doping amount (0.5, 1.0, and 1.5 W) nanofilms were prepared by magnetron sputtering technology, and the nonlinear behavior of Co-doped Sb2Se3 nanofilms at near infrared were systematically studied. The results of the femtosecond Z-Scan experiment indicate that the Co-doped Sb2Se3 nanofilms exhibit broadband nonlinear response properties owing to the free carrier absorption, the Kerr refraction, the two-photon absorption, and the free carrier refraction. The nonlinear absorption coefficients of Co-doped Sb2Se3 nanofilms are from 3.0 × 10−9 to 2.03 × 10−8 m/ W under excitation at 800, 980, and 1,030 nm, and the nonlinear refractive index of the Co-doped Sb2Se3 nanofilms is from 4.0 × 10−16 to -3.89 × 10−15 m2/ W at 800, 980, and 1,030 nm. More importantly, Co-doped Sb2Se3 (1.5 W) nanofilm exhibits ultrafast carrier absorption (<1 ps) and a stronger transient absorption intensity of ΔOD > 6.3. The Co-doping content can controllably tune the crystalline degree, the ultrafast carrier absorption, the intensity of the reverse saturation absorption, the broadband nonlinear optical response, and the carrier relaxation time of Co-doped Sb2Se3 nanofilms. These results are sufficient to support their applications in broadband nonlinear photonic devices.

The Broadband Nonlinear Optical Response in Graphene/MoS2/Ag Thin Films at Near Infrared

Graphene/MoS2/Ag thin films were successfully prepared by the magnetron sputtering technique and liquid phase exfoliation. Structure, morphology, optical properties, and nonlinear optical characteristics of the graphene/MoS2/Ag and graphene/MoS2 thin films were studied by X-ray diffractometer, spectrophotometer, field-scanning electron microscope, and femtosecond (fs) Z-scan technique. The results of the fs Z-scan experiment indicate that the graphene/MoS2/Ag thin films exhibit reverse saturable absorption properties due to the free carrier absorption and two-photon absorption. More importantly, with the increase of DC magnetron sputtering power (from 5 to 15 W), the local surface plasmon resonance effect of the Ag thin films increases, which leads to the enhancement of nonlinear optical properties of the graphene/MoS2/Ag thin films. The nonlinear absorption coefficients of the graphene/MoS2/Ag thin films are increased from 1.14 × 10–10 to 1.8 × 10–10 m/W at 800 nm and from 4.79 × 10–11 to 6.79 × 10–11 m/W at 1,030 nm, and the nonlinear refraction index of the graphene/MoS2/Ag thin films is -4.37 × 10–17∼−4.18 × 10–16 m2/W under the excitation of 800 and 1,030 nm, respectively. Moreover, when the graphene/MoS2/Ag thin films were excited at 800 and 1,030 nm, respectively, the nonlinear figure of merit values of the graphene/MoS2/Ag thin films are increased from 1.23 to 2.91 and from 1.30 to 1.47, which are enough to support the application of the graphene/MoS2/Ag thin films in the field of all-optical switching applications.

Wavelength-Dependent Optical Nonlinear Absorption of Au-Ag Nanoparticles

The nonlinear optical absorption properties of Au-Ag nanoparticles (NPs) were studied using an open-aperture Z-scan under a nanosecond pulsed laser with wavelengths of 450 nm, 510 nm, 550 nm, and 600 nm. The experimental results demonstrated that, when the laser intensity was 1.04 × 1013 W/m2, the Au-Ag NPs showed saturated absorption (SA). When the laser intensity was increased to 3.03 × 1013 W/m2, the switch from SA to reverse saturation absorption (RSA) occurred. The nonlinear absorption and its transformation were analyzed by using local surface plasmon resonance (LSPR) effect, bleaching of ground state plasmon, and free carrier absorption theory.