Potential fluctuations in CdTe epitaxial layers studied by shallow donor spectroscopy in the far infrared

2008 ◽  
Vol 20 (19) ◽  
pp. 195217 ◽  
Author(s):  
K Karpierz ◽  
J Łusakowski ◽  
J Kossut ◽  
M Grynberg
Keyword(s):  
Far Infrared ◽  
Shallow Donor ◽  
Epitaxial Layers ◽  
Potential Fluctuations

The nitrogen-related shallow donor in ZnSe : N epitaxial layers

1998 ◽  
Vol 184-185 ◽  
pp. 520-524 ◽  
Author(s):  
E. Tournié ◽  
C. Morhain ◽  
G. Neu ◽  
J.-P. Faurie
Keyword(s):  
Shallow Donor ◽  
Epitaxial Layers

Shallow-donor impurities in indium selenide investigated by means of far-infrared spectroscopy

1992 ◽  
Vol 46 (8) ◽  
pp. 4607-4616 ◽  
Author(s):  
J. Martinez-Pastor ◽  
A. Segura ◽  
C. Julien ◽  
A. Chevy
Keyword(s):  
Infrared Spectroscopy ◽  
Far Infrared ◽  
Shallow Donor ◽  
Indium Selenide ◽  
Far Infrared Spectroscopy

Microscopic potential fluctuations in Si-doped AlGaN epitaxial layers with various AlN molar fractions and Si concentrations

2016 ◽  
Vol 119 (2) ◽  
pp. 025707 ◽  
Author(s):  
Satoshi Kurai ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu ◽  
Yoichi Yamada
Keyword(s):  
Epitaxial Layers ◽  
Potential Fluctuations ◽  
Si Doped

CALCULATION OF MAGNETODONOR STATES IN InP AND POLARON EFFECTS

2009 ◽  
Vol 23 (12n13) ◽  
pp. 3014-3018 ◽  
Author(s):  
ALEXYS BRUNO-ALFONSO ◽  
GUO-QIANG HAI
Keyword(s):  
Magnetic Fields ◽  
Excited States ◽  
Far Infrared ◽  
Shallow Donor ◽  
Good Qualitative Agreement ◽  
Phonon Interaction ◽  
Transition Energies ◽  
Electron Phonon Interaction ◽  
Multi Level ◽  
Main Effects

Far-infrared transitions in polar semiconductors are known to be affected by the presence of shallow donor impurities, external magnetic fields and the electron-LO-phonon interaction. We calculate the magnetodonor states in indium phosphide by a diagonalization procedure, and introduce the electron-phonon interaction by the Fröhlich term. The main effects of this perturbation are calculated by a multi-level version of the Wigner-Brillouin theory. We determine the transition energies, from the ground state to excited states, and find good qualitative agreement with recently reported absorption-spectroscopy measurements in the 100-800 cm-1 range, with applied magnetic fields up to 30 T. Our calculations suggest that experimental peak splittings in the 400-450 cm-1 range are due to the electron-phonon interaction.

Far-infrared pump-probe measurement of the lifetime of the 2p−1 shallow donor level in n-GaAs

1996 ◽  
Vol 17 (3) ◽  
pp. 569-577 ◽  
Author(s):  
A. J. Kalkman ◽  
H. P. M. Pellemans ◽  
T. O. Klaassen ◽  
W. Th. Wenckebach
Keyword(s):  
Far Infrared ◽  
Shallow Donor ◽  
Probe Measurement ◽  
Donor Level ◽  
Pump Probe ◽  
Shallow Donor Level
Sign in / Sign up

Export Citation Format

Share Document