Donor Support to Electoral Cycles

This rapid literature review explains the stages of an election cycle, and how donors provide support to electoral cycles. It draws mainly on policy guidance websites and papers due to the questions of this review and the level of analysis taken (global-level, donor-level). It focuses on publications from the last five years, and/or current/forthcoming donor strategies. The electoral cycle and its stages are well-established policy concepts for which there is widespread acceptance and use. Donor support to electoral cycles (through electoral assistance and electoral observation) is extremely widespread, and the dominant donors in this area are the multilateral organisations like the United Nations (UN) and the European Union (EU), and also the United States (US). While almost all bilateral donors also carry out some work in this area, “almost all major electoral support programmes are provided jointly with international partners” (DFID, 2014, p.5). Bilateral donors may provide broader support to democratic governance initiatives, which may not be framed as electoral assistance, but may contribute to the wider enabling environment. All of the donors reviewed in this query emphasise that their programmes are designed according to the local context and needs, and thus, beyond the big actors - EU, UN and US, there is little overarching information on what the donors do in this area. While there is a significant literature base in the broad area of electoral support, it tends to be focussed at the country, programme, or thematic, level, rather than at the global, or donor, level taken by this paper. There was a peak in global-level publications on this subject around 2006, the year the electoral cycle model was published by the European Commission, International Institute for Democracy and Electoral Assistance (International IDEA), and United Nations Development Programme (UNDP). This review concludes by providing examples of the electoral assistance work carried out by five donors (UN, EU, US, UK and Germany).

QUANTUM MECHANICAL STUDY OF THE MAGNETIZATION EFFECT ON THE ELECTRONIC STRUCTURE OF SI: P

Non-collinear calculation of the electronic structure of silicon doped with phosphorus were performed. The dependence of the energy gap between the donor level and the bottom of the conduction band on the phosphorus atom magnetization is investigate, the possibility of manipulation of the phosphorus atom spin using a magnetic field is shown.

Machine Learning Approach to Predicting Stem-Cell Donor Availabilitys

0. AbstractThe success of Unrelated Donor stem-cell transplants depends not only on finding genetically matched donors but also on donor availability. On average 50% of potential donors in the NMDP database are unavailable for a variety of reasons, after initially matching a patient, with significant variations in availability among subgroups (e.g., by race or age). Several studies have established univariate donor characteristics associated with availability. Individual consideration of each applicable characteristic is laborious. Extrapolating group averages to individual donor level tends to be highly inaccurate. In the current environment with enhanced donor data collection, we can make better estimates of individual donor availability. In this study, we propose a Machine Learning based approach to predict availability of every registered donor, to be used during donor selection and reduce the time taken to complete a transplant.

Segregation Gettering Model for Nickel in p/p+ Silicon Wafers

The segregation gettering of nickel in p/p+ silicon epitaxial wafers is analyzed based on the gettering model considering the competitive interaction between segregation effect and nickel precipitations at the surface during the cooling process after heat treatments. It is found that the segregation is effective at higher temperatures than Ni-silicide formation temperatures even if the nickel donor level lies close to the valence band edge, resulting in the suppression of Ni-silicide formation at lower temperatures. The gettering effect is suggested to be useful for the low temperature process for a future device fabrication.