Interstitial impurity-induced magnetism inα-PbO surface

2014 ◽  
Vol 27 (1) ◽  
pp. 016002 ◽  
Author(s):  
E Arguelles ◽  
S Amino ◽  
S Aspera ◽  
H Nakanishi ◽  
H Kasai
1992 ◽  
Vol 259 ◽  
Author(s):  
Chris G. Van De Walle

ABSTRACTState-of-the-art first-principles calculations allow detailed studies of the mechanisms by which hydrogen and fluorine interact with silicon. The results for hydrogen are presented in the form of an energy diagram which includes many different configurations. The theoretical values allow a discussion of issues such as hydrogen solubility, and desorption from a Si surface. For fluorine, we investigate the behavior as an interstitial impurity in the bulk, as well as Si-F interactions at or near the surface. A study of the insertion of F atoms into Si-Si bonds elucidates the microscopic mechanisms of etching, and the dependence of etch rate on doping. Thermodynamic aspects of HF etching are briefly discussed.


2002 ◽  
Vol 27 (6) ◽  
pp. 430 ◽  
Author(s):  
Adel Rahmani ◽  
Patrick C. Chaumet ◽  
Garnett W. Bryant

1991 ◽  
Vol 28 (2) ◽  
pp. 135-143
Author(s):  
Shinsuke YAMANAKA ◽  
Yuichi SATO ◽  
Hidenori OGAWA ◽  
Masanobu MIYAKE

1978 ◽  
Vol 69-70 ◽  
pp. 748-750 ◽  
Author(s):  
F. Dworschak ◽  
R. Lennartz ◽  
J. Selke ◽  
H. Wollenberger

2019 ◽  
Vol 20 (1) ◽  
pp. 160-172 ◽  
Author(s):  
Naomi Hirayama ◽  
Tsutomu Iida ◽  
Mariko Sakamoto ◽  
Keishi Nishio ◽  
Noriaki Hamada

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