scholarly journals Substitutional and interstitial impurity p-type doping of thermoelectric Mg2Si: a theoretical study

2019 ◽  
Vol 20 (1) ◽  
pp. 160-172 ◽  
Author(s):  
Naomi Hirayama ◽  
Tsutomu Iida ◽  
Mariko Sakamoto ◽  
Keishi Nishio ◽  
Noriaki Hamada
2019 ◽  
Vol 46 (2) ◽  
pp. 128-135
Author(s):  
Li-Xiao Kong ◽  
Chang-Shan Zhang ◽  
Qi-Ying Xia ◽  
Xue-Hai Ju
Keyword(s):  
Type D ◽  

2001 ◽  
Vol 666 ◽  
Author(s):  
Yanfa Yan ◽  
S.B. Zhang ◽  
S.J. Pennycook ◽  
S.T. Pantelides

ABSTRACTWe present results of a comprehensive set of first-principles total-energy calculations of native and impurity-defect complexes in ZnO and use these results to elucidate the problems that occur in efforts to achieve p-type doping. The analysis naturally leads to new approaches that are likely to overcome the difficulties. The results provide detailed explanations of recent puzzling observations made in attempts to produce p-type ZnO.


2012 ◽  
Vol 42 (11) ◽  
pp. 1124-1134
Author(s):  
Jun HU ◽  
HaiYan HE ◽  
BiCai PAN
Keyword(s):  

ACS Omega ◽  
2020 ◽  
Vol 5 (36) ◽  
pp. 23491-23496
Author(s):  
Su-Qin Zhou ◽  
Qi-Ying Xia ◽  
Li-Xiao Kong ◽  
Karuppasamy Ayyanar ◽  
Xue-Hai Ju

2011 ◽  
Vol 189-193 ◽  
pp. 1660-1663
Author(s):  
Zhi Hua Xiong ◽  
Lan Li Chen ◽  
Qi Xin Wan

Based on the first-principle calculations, we present a study for p-type ZnO doping. The calculated results show that (F, Li) codoping can suppress the formation of interstitial Li because the formation energy of FO-LiZn is lower than that of FO-Lii under O-rich condition. However, it is also found that FO-LiZn codoping could not realize p-type ZnO because FO-LiZn forms a fully passive complex. Interestingly, we further find FO-2LiZn is a stable acceptor that has lower formation energy and shallower transition level under O-rich condition. We expect this study might be helpful for synthesizing good p-type ZnO by controlling (F, Li) codoping.


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