Molecular dynamics simulations of ferroelectric domain formation by oxygen vacancy

2018 ◽  
Vol 51 (18) ◽  
pp. 185303 ◽  
Author(s):  
Lin Zhu ◽  
Jeong Ho You ◽  
Jinghong Chen ◽  
Changdong Yeo
2013 ◽  
Vol 104 (2) ◽  
pp. 591a
Author(s):  
Alexander W. Chen ◽  
W.F. Drew Bennet ◽  
Tsjerk A. Wassenaar ◽  
D. Peter Tieleman

2020 ◽  
Vol 22 (10) ◽  
pp. 5413-5417 ◽  
Author(s):  
Johannes Kaub ◽  
Joe Kler ◽  
Stephen C. Parker ◽  
Roger A. De Souza

Activation enthalpies of oxygen-vacancy migration in BaTiO3 reported in the literature from experiment and from static atomistic simulations.


2006 ◽  
Vol 91 (7) ◽  
pp. 2517-2531 ◽  
Author(s):  
David Y. Haubertin ◽  
Hocine Madaoui ◽  
Alain Sanson ◽  
Raphaël Guérois ◽  
Stéphane Orlowski

2012 ◽  
Vol 24 (48) ◽  
pp. 485002 ◽  
Author(s):  
Marcel Schie ◽  
Astrid Marchewka ◽  
Thomas Müller ◽  
Roger A De Souza ◽  
Rainer Waser

1987 ◽  
Vol 105 ◽  
Author(s):  
Y. Bar-Yam ◽  
S. T. Pantelides ◽  
J. D. Joannopoulos ◽  
D. C. Allan ◽  
M. P. Teter

AbstractWe report parameter-free self-consistent calculations of structural properties for the oxygen vacancy in silicon-dioxide using new oxygen pseudopotentials and quantum molecular dynamics simulations. Results challenge the accepted identification of the oxygen vacancy with the paramagnetic E1′ center. Bonding of the adjacent silicon atoms occurs sufficiently strongly for all charge states to inhibit the asymmetric distortion which would be required for correspondence with the E1′ center.


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