Establishment of design space for high current gain in III-N hot electron transistors

2017 ◽  
Vol 33 (1) ◽  
pp. 015018
Author(s):  
Geetak Gupta ◽  
Elaheh Ahmadi ◽  
Donald J Suntrup ◽  
Umesh K Mishra
Nano Letters ◽  
2015 ◽  
Vol 15 (12) ◽  
pp. 7905-7912 ◽  
Author(s):  
Carlos M. Torres ◽  
Yann-Wen Lan ◽  
Caifu Zeng ◽  
Jyun-Hong Chen ◽  
Xufeng Kou ◽  
...  

1981 ◽  
Vol 17 (17) ◽  
pp. 620 ◽  
Author(s):  
J.M. Shannon ◽  
A. Gill

Physica B+C ◽  
1985 ◽  
Vol 134 (1-3) ◽  
pp. 111-115 ◽  
Author(s):  
J.M. Woodwock ◽  
J.J. Harris ◽  
J.M. Shannon

2015 ◽  
Vol 106 (3) ◽  
pp. 032101 ◽  
Author(s):  
Zhichao Yang ◽  
Yuewei Zhang ◽  
Digbijoy N. Nath ◽  
Jacob B. Khurgin ◽  
Siddharth Rajan

Nano Research ◽  
2020 ◽  
Vol 13 (8) ◽  
pp. 2308-2308
Author(s):  
Xu Zhao ◽  
Peng Chen ◽  
Xingqiang Liu ◽  
Guoli Li ◽  
Xuming Zou ◽  
...  

1990 ◽  
Author(s):  
Shinji YAMAURA ◽  
Yasuyuki MIYAMOTO ◽  
Kazuhito FURUYA

1987 ◽  
Vol 102 ◽  
Author(s):  
A. F. J. Levi ◽  
R. T. Tung ◽  
J. L. Batstone ◽  
M. Anzlowar

ABSTRACTWe have explored the possibility of fabricating a metal base transistor in the Si/CoSi2 material system. Utilizing recent advances in the growth of thin, pinhole free, CoSi2 layers on Si(111) we have measured the transistor characteristics of a Si/CoSi2/Si structure. The observed low common emitter current gain is attributed to an absence of current carrying states in the CoSi2 transistor base.


2016 ◽  
Vol 108 (19) ◽  
pp. 192101 ◽  
Author(s):  
Zhichao Yang ◽  
Yuewei Zhang ◽  
Sriram Krishnamoorthy ◽  
Digbijoy N. Nath ◽  
Jacob B. Khurgin ◽  
...  

2015 ◽  
Vol 36 (1) ◽  
pp. 23-25 ◽  
Author(s):  
Geetak Gupta ◽  
Matthew Laurent ◽  
Haoran Li ◽  
Donald J. Suntrup ◽  
Edwin Acuna ◽  
...  

Nano Research ◽  
2020 ◽  
Vol 13 (8) ◽  
pp. 2085-2090 ◽  
Author(s):  
Xu Zhao ◽  
Peng Chen ◽  
Xingqiang Liu ◽  
Guoli Li ◽  
Xuming Zou ◽  
...  

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