Hot Electron Transistors Using Si/CoSi2

1987 ◽  
Vol 102 ◽  
Author(s):  
A. F. J. Levi ◽  
R. T. Tung ◽  
J. L. Batstone ◽  
M. Anzlowar
Keyword(s):  
Current Gain ◽  
Material System ◽  
Hot Electron ◽  
Metal Base ◽  
Emitter Current ◽  
Recent Advances ◽  
Electron Transistors

ABSTRACTWe have explored the possibility of fabricating a metal base transistor in the Si/CoSi2 material system. Utilizing recent advances in the growth of thin, pinhole free, CoSi2 layers on Si(111) we have measured the transistor characteristics of a Si/CoSi2/Si structure. The observed low common emitter current gain is attributed to an absence of current carrying states in the CoSi2 transistor base.

Hot Electron Transistors Using Si/CoSi2

1987 ◽  
Vol 107 ◽  
Author(s):  
A. F. J. Levi ◽  
R. T. Tung ◽  
J. L. Batstone ◽  
M. Anzlowar
Keyword(s):  
Current Gain ◽  
Material System ◽  
Hot Electron ◽  
Metal Base ◽  
Emitter Current ◽  
Recent Advances ◽  
Electron Transistors

AbstractWe have explored the possibility of fabricating a metal base transistor in the Si/CoSi2 material system. Utilizing recent advances in the growth of thin, pinhole free, CoSi2 layers on Si(111) we have measured the transistor characteristics of a Si/CoSi2/Si structure. The observed low common emitter current gain is attributed to an absence of current carrying states in the CoSi2 transistor base.

Common Emitter Current Gain >1 in III-N Hot Electron Transistors With 7-nm GaN/InGaN Base

2015 ◽  
Vol 36 (5) ◽  
pp. 439-441 ◽  
Author(s):  
Geetak Gupta ◽  
Elaheh Ahmadi ◽  
Karine Hestroffer ◽  
Edwin Acuna ◽  
Umesh K. Mishra
Keyword(s):  
Current Gain ◽  
Hot Electron ◽  
Emitter Current ◽  
Electron Transistors

Novel Electronics Enabled by Rare Earth Arsenides Buried in III-V Semiconductors

1993 ◽  
Vol 301 ◽  
Author(s):  
S. James Allen ◽  
Dan Brehmer ◽  
C.J. PalmstrØm
Keyword(s):  
Rare Earth ◽  
Epitaxial Layers ◽  
Hot Electron ◽  
Surface Geometry ◽  
Electron Effective Mass ◽  
Metal Base ◽  
Lattice Match ◽  
Linear Material ◽  
Shubnikov De Haas Oscillations ◽  
Electron Transistors

ABSTRACTHeterostructures consisting of III-V semiconductors and epitaxial layers of the rare earth monoarsenides can be grown by molecular beam epitaxy. By alloying ErAs with ScAs, lattice match can be achieved with (Al,Ga)As. Using magneto-transport measurements, we show that these layers are semi-metallic with equal electron and hole concentrations, 3.0 ×1020 cm−3. Shubnikov-de Haas oscillations are used to confirm the predicted Fermi surface geometry and measure the electron effective mass and the coupling to the 4f spin on the Er3+ ion. Remarkably, the material shows no transition from semimetal to semiconductor as the film thickness is reduced to three monolayers. Below three monolayers the films are not uniform and are believed to consist of islands three monolayers high.This system provides a unique opportunity to explore novel electronics based on controlled transport through semimetal/semiconductor heterostructures. Lateral transport through semimetal islands immersed in a δ-doped layer may provide a fast non-linear material for THz electronics. Vertical transport through thin epitaxial layers may enable resonant tunneling hot electron transistors with a semi-metal base. Preliminary experiments on transistor like test structures measure some transfer through a 10 monolayer thick semimetal base. They also identify overgrowth of the III-V semiconductor on the semimetal layer as the key materials issue.

Current gain in sub-10 nm base GaN tunneling hot electron transistors with AlN emitter barrier

2015 ◽  
Vol 106 (3) ◽  
pp. 032101 ◽  
Author(s):  
Zhichao Yang ◽  
Yuewei Zhang ◽  
Digbijoy N. Nath ◽  
Jacob B. Khurgin ◽  
Siddharth Rajan
Keyword(s):  
Current Gain ◽  
Hot Electron ◽  
Electron Transistors

Establishment of design space for high current gain in III-N hot electron transistors

2017 ◽  
Vol 33 (1) ◽  
pp. 015018
Author(s):  
Geetak Gupta ◽  
Elaheh Ahmadi ◽  
Donald J Suntrup ◽  
Umesh K Mishra
Keyword(s):  
Design Space ◽  
Current Gain ◽  
Hot Electron ◽  
High Current ◽  
Electron Transistors

High-Current Gain Two-Dimensional MoS2-Base Hot-Electron Transistors

Nano Letters ◽  
2015 ◽  
Vol 15 (12) ◽  
pp. 7905-7912 ◽  
Author(s):  
Carlos M. Torres ◽  
Yann-Wen Lan ◽  
Caifu Zeng ◽  
Jyun-Hong Chen ◽  
Xufeng Kou ◽  
...  
Keyword(s):  
Current Gain ◽  
Two Dimensional ◽  
Hot Electron ◽  
High Current ◽  
Electron Transistors

Current gain above 10 in sub-10 nm base III-Nitride tunneling hot electron transistors with GaN/AlN emitter

2016 ◽  
Vol 108 (19) ◽  
pp. 192101 ◽  
Author(s):  
Zhichao Yang ◽  
Yuewei Zhang ◽  
Sriram Krishnamoorthy ◽  
Digbijoy N. Nath ◽  
Jacob B. Khurgin ◽  
...  
Keyword(s):  
Current Gain ◽  
Hot Electron ◽  
Electron Transistors

Common Emitter Current and Voltage Gain in III-Nitride Tunneling Hot Electron Transistors

2015 ◽  
Vol 36 (5) ◽  
pp. 436-438 ◽  
Author(s):  
Zhichao Yang ◽  
Digbijoy N. Nath ◽  
Yuewei Zhang ◽  
Jacob B. Khurgin ◽  
Siddharth Rajan
Keyword(s):  
Voltage Gain ◽  
Hot Electron ◽  
Emitter Current ◽  
Electron Transistors

High current gain in monolithic hot-electron transistors

1981 ◽  
Vol 17 (17) ◽  
pp. 620 ◽  
Author(s):  
J.M. Shannon ◽  
A. Gill
Keyword(s):  
Current Gain ◽  
Hot Electron ◽  
High Current ◽  
Electron Transistors

Current gain above 10 in sub-10 nm base III-nitride tunneling hot electron transistors with GaN/AlN emitter

2016 ◽  
Author(s):  
Zhichao Yang ◽  
Yuewei Zhang ◽  
Sriram Krishnamoorthy ◽  
Digbijoy N. Nath ◽  
Jacob B. Khurgin ◽  
...  
Keyword(s):  
Current Gain ◽  
Hot Electron ◽  
Electron Transistors
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