Current gain in sub-10 nm base GaN tunneling hot electron transistors with AlN emitter barrier

2015 ◽  
Vol 106 (3) ◽  
pp. 032101 ◽  
Author(s):  
Zhichao Yang ◽  
Yuewei Zhang ◽  
Digbijoy N. Nath ◽  
Jacob B. Khurgin ◽  
Siddharth Rajan
Keyword(s):  
Current Gain ◽  
Hot Electron ◽  
Electron Transistors

Hot Electron Transistors Using Si/CoSi2

1987 ◽  
Vol 102 ◽  
Author(s):  
A. F. J. Levi ◽  
R. T. Tung ◽  
J. L. Batstone ◽  
M. Anzlowar
Keyword(s):  
Current Gain ◽  
Material System ◽  
Hot Electron ◽  
Metal Base ◽  
Emitter Current ◽  
Recent Advances ◽  
Electron Transistors

ABSTRACTWe have explored the possibility of fabricating a metal base transistor in the Si/CoSi2 material system. Utilizing recent advances in the growth of thin, pinhole free, CoSi2 layers on Si(111) we have measured the transistor characteristics of a Si/CoSi2/Si structure. The observed low common emitter current gain is attributed to an absence of current carrying states in the CoSi2 transistor base.

Establishment of design space for high current gain in III-N hot electron transistors

2017 ◽  
Vol 33 (1) ◽  
pp. 015018
Author(s):  
Geetak Gupta ◽  
Elaheh Ahmadi ◽  
Donald J Suntrup ◽  
Umesh K Mishra
Keyword(s):  
Design Space ◽  
Current Gain ◽  
Hot Electron ◽  
High Current ◽  
Electron Transistors

High-Current Gain Two-Dimensional MoS2-Base Hot-Electron Transistors

Nano Letters ◽  
2015 ◽  
Vol 15 (12) ◽  
pp. 7905-7912 ◽  
Author(s):  
Carlos M. Torres ◽  
Yann-Wen Lan ◽  
Caifu Zeng ◽  
Jyun-Hong Chen ◽  
Xufeng Kou ◽  
...  
Keyword(s):  
Current Gain ◽  
Two Dimensional ◽  
Hot Electron ◽  
High Current ◽  
Electron Transistors

Current gain above 10 in sub-10 nm base III-Nitride tunneling hot electron transistors with GaN/AlN emitter

2016 ◽  
Vol 108 (19) ◽  
pp. 192101 ◽  
Author(s):  
Zhichao Yang ◽  
Yuewei Zhang ◽  
Sriram Krishnamoorthy ◽  
Digbijoy N. Nath ◽  
Jacob B. Khurgin ◽  
...  
Keyword(s):  
Current Gain ◽  
Hot Electron ◽  
Electron Transistors

High current gain in monolithic hot-electron transistors

1981 ◽  
Vol 17 (17) ◽  
pp. 620 ◽  
Author(s):  
J.M. Shannon ◽  
A. Gill
Keyword(s):  
Current Gain ◽  
Hot Electron ◽  
High Current ◽  
Electron Transistors

Current gain above 10 in sub-10 nm base III-nitride tunneling hot electron transistors with GaN/AlN emitter

2016 ◽  
Author(s):  
Zhichao Yang ◽  
Yuewei Zhang ◽  
Sriram Krishnamoorthy ◽  
Digbijoy N. Nath ◽  
Jacob B. Khurgin ◽  
...  
Keyword(s):  
Current Gain ◽  
Hot Electron ◽  
Electron Transistors

Common Emitter Current Gain >1 in III-N Hot Electron Transistors With 7-nm GaN/InGaN Base

2015 ◽  
Vol 36 (5) ◽  
pp. 439-441 ◽  
Author(s):  
Geetak Gupta ◽  
Elaheh Ahmadi ◽  
Karine Hestroffer ◽  
Edwin Acuna ◽  
Umesh K. Mishra
Keyword(s):  
Current Gain ◽  
Hot Electron ◽  
Emitter Current ◽  
Electron Transistors

Monolithic hot electron transistors in GaAs with high current gain

Physica B+C ◽  
1985 ◽  
Vol 134 (1-3) ◽  
pp. 111-115 ◽  
Author(s):  
J.M. Woodwock ◽  
J.J. Harris ◽  
J.M. Shannon
Keyword(s):  
Current Gain ◽  
Hot Electron ◽  
High Current ◽  
Electron Transistors

Hot Electron Transistors Using Si/CoSi2

1987 ◽  
Vol 107 ◽  
Author(s):  
A. F. J. Levi ◽  
R. T. Tung ◽  
J. L. Batstone ◽  
M. Anzlowar
Keyword(s):  
Current Gain ◽  
Material System ◽  
Hot Electron ◽  
Metal Base ◽  
Emitter Current ◽  
Recent Advances ◽  
Electron Transistors

AbstractWe have explored the possibility of fabricating a metal base transistor in the Si/CoSi2 material system. Utilizing recent advances in the growth of thin, pinhole free, CoSi2 layers on Si(111) we have measured the transistor characteristics of a Si/CoSi2/Si structure. The observed low common emitter current gain is attributed to an absence of current carrying states in the CoSi2 transistor base.

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