An optoelectronic notch (‘dip’) phenomenon in the heterodyne photocarrier radiometry frequency response of Si wafers: a route to quantitative trap-state dynamic processes in semiconductors
Keyword(s):
2016 ◽
Vol 37
(6)
◽
Keyword(s):
2016 ◽
Vol 46
(8)
◽
pp. 2403-2410
◽
1994 ◽
Vol 101
(1)
◽
pp. 111-117
◽
Keyword(s):
1992 ◽
Vol 50
(1)
◽
pp. 286-287
1987 ◽
Vol 134
(3)
◽
pp. 153
◽