Influence of CeO2 on microstructure, cracking and trapped field of TSIG YBCO single-grain superconductors

2020 ◽  
Vol 33 (3) ◽  
pp. 034005
Author(s):  
K Zmorayova ◽  
L Vojtkova ◽  
T Hlasek ◽  
J Plechacek ◽  
P Diko
Keyword(s):  
Author(s):  
Guo-Zheng Li ◽  
Miao Wang

Abstract A novel preform compaction method based on one new type of divisible mould was employed for fabricating single-grain YBCO bulk superconductor, which can complete the preform demoulding process through opening of the mould, rather than pushing the preform out in the regular mould. Thus it has natural superiority on eliminating macro-cracks, which has been proved by the sample surface morphology and the trapped field characterization. In addition, the divisible mould pressed sample exhibits higher levitation force and trapped field properties than the regular mould pressed samples, verifying the potentials of the divisible mould on improving the bulk performance. The optical micrograph results prove the superiority of the divisible mould on eliminating tiny cracks on sample surface. The processing facility and sample reliability brought by the divisible mould should also be emphasized, because the crushing and re-pressing of preform when it presents visible cracks can be omitted and the failed samples with surface cracks will no longer appear. Consequently, the experimental efficiency and stability are both enhanced.


2017 ◽  
Vol 30 (10) ◽  
pp. 105013
Author(s):  
M Radusovska ◽  
P Diko ◽  
S Piovarci ◽  
S-D Park ◽  
B-H Jun ◽  
...  
Keyword(s):  

2019 ◽  
Vol 32 (2) ◽  
pp. 025005 ◽  
Author(s):  
Yunhua Shi ◽  
Anthony R Dennis ◽  
John H Durrell ◽  
David A Cardwell

2002 ◽  
Vol 715 ◽  
Author(s):  
Sang-Hoon Jung ◽  
Jae-Hoon Lee ◽  
Min-Koo Han

AbstractA short channel polycrystalline silicon thin film transistor (poly-Si TFT), which has single grain boundary in the center of channel, is reported. The reported poly-Si TFT employs lateral grain growth method through aluminum patterns, which acts as a selective beam mask and a lateral heat sink during the laser irradiation, on an amorphous silicon layer. The electrical characteristics of the proposed poly-Si TFT have been considerably improved due to grain boundary density lowered. The reported short channel poly-Si TFT with single grain boundary exhibits high mobility as 222 cm2/Vsec and large on/off current ratio exceeding 1 × 108.


2019 ◽  
Author(s):  
Jennifer Gifford ◽  
◽  
Blake Oswell LaDouceur ◽  
William J. Davis ◽  
Shawn J. Malone
Keyword(s):  

2020 ◽  
Author(s):  
Vipin Kumar Singh ◽  
Sudipta Roy Barman
Keyword(s):  

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