Short Channel Poly-Si TFT with Single Grain Boundary by Excimer Laser Annealing on Al-masked a-Si Layer
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AbstractA short channel polycrystalline silicon thin film transistor (poly-Si TFT), which has single grain boundary in the center of channel, is reported. The reported poly-Si TFT employs lateral grain growth method through aluminum patterns, which acts as a selective beam mask and a lateral heat sink during the laser irradiation, on an amorphous silicon layer. The electrical characteristics of the proposed poly-Si TFT have been considerably improved due to grain boundary density lowered. The reported short channel poly-Si TFT with single grain boundary exhibits high mobility as 222 cm2/Vsec and large on/off current ratio exceeding 1 × 108.
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2007 ◽
Vol 124-126
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pp. 259-262
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1998 ◽
Vol 166
(2)
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pp. 715-728
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2008 ◽
Vol 23
(7)
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pp. 075007
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1991 ◽
Vol 30
(Part 1, No. 12B)
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pp. 3700-3703
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