scholarly journals Mid-infrared materials and devices on a Si platform for optical sensing

2014 ◽  
Vol 15 (1) ◽  
pp. 014603 ◽  
Author(s):  
Vivek Singh ◽  
Pao Tai Lin ◽  
Neil Patel ◽  
Hongtao Lin ◽  
Lan Li ◽  
...  
Keyword(s):  
Optical Sensing ◽  
Mid Infrared ◽  
Infrared Materials

Measurements of nonlinear refraction in the mid-infrared materials ZnGeP2 and AgGaS2

2017 ◽  
Vol 123 (3) ◽  
Author(s):  
Wenkai Li ◽  
Yanyan Li ◽  
Yi Xu ◽  
Jun Lu ◽  
Pengfei Wang ◽  
...  
Keyword(s):  
Nonlinear Refraction ◽  
Mid Infrared ◽  
Infrared Materials

Highly Sensitive Reconfigurable Plasmonic Metasurface with Dual-Band Response for Optical Sensing and Switching in the Mid-Infrared Spectrum

2020 ◽  
Vol 50 (1) ◽  
pp. 120-128
Author(s):  
Shohreh Mobasser ◽  
Shima Poorgholam-Khanjari ◽  
Maryam Bazgir ◽  
Ferdows B. Zarrabi
Keyword(s):  
Infrared Spectrum ◽  
Optical Sensing ◽  
Dual Band ◽  
Mid Infrared ◽  
Highly Sensitive

Mid-infrared Photon Localization Using Two Kinds of Mid-infrared Materials as Random Scatterers

2002 ◽  
Vol 19 (9) ◽  
pp. 1353-1355 ◽  
Author(s):  
Liu Xiao-Dong ◽  
Hou Lan-Tian ◽  
Wang Hui-Tian ◽  
Li Shu-Guang ◽  
Huo Guang-Li
Keyword(s):  
Mid Infrared ◽  
Infrared Photon ◽  
Infrared Materials ◽  
Photon Localization

Growth of NLO Chalcopyrite Materials by Omvpe

1997 ◽  
Vol 484 ◽  
Author(s):  
M. L. Timmons ◽  
K. J. Bachmann
Keyword(s):  
Vapor Phase ◽  
Minority Carrier ◽  
Organometallic Vapor Phase Epitaxy ◽  
Lattice Match ◽  
Mid Infrared ◽  
Figures Of Merit ◽  
Carrier Lifetimes ◽  
Minority Carrier Lifetimes ◽  
Infrared Materials ◽  
P Type

AbstractThis paper describes the application of organometallic vapor phase epitaxy to the growth of II-1V-V2 chalcopyrite materials that have high figures of merit for nonlinear optical (NLO) applications. ZnGeAs2, although not a particularly interesting NLO material, is used as a model for the growth of ZnGeP2, which is. Both compounds, as well as others, have been successfully grown by vapor phase on III-V substrates that provide a close lattice match. Doping studies using Group II and VI elements have been undertaken to control the p-type conductivity found in both compounds. Except for the possible case of indium, the results of these experiments are less than encouraging. Minority-carrier lifetimes of 150 ns have been measured in ZnGeAs2.The results of this work are used to make projections about the growth of CdGeAs2. CdGeAs2 is promising for the next generation of NLO mid-infrared materials if an absorption band that occurs at about 5 μm can be reduced. The growth projections suggest that this compound will be difficult to grow epitaxially and has no III-V substrate that provides a close lattice match. Mixing CdGeAs2 with other II-IV-V2 materials may offer solutions to the substrate problem. The defect properties of CdGeAs2 have not, to our knowledge, been studied.

scholarly journals Germanium-based integrated photonics from near- to mid-infrared applications

Nanophotonics ◽  
2018 ◽  
Vol 7 (11) ◽  
pp. 1781-1793 ◽  
Author(s):  
Delphine Marris-Morini ◽  
Vladyslav Vakarin ◽  
Joan Manel Ramirez ◽  
Qiankun Liu ◽  
Andrea Ballabio ◽  
...  
Keyword(s):  
Silicon Photonics ◽  
High Performance ◽  
Optical Sensing ◽  
Building Blocks ◽  
Transparency Window ◽  
Integrated Photonics ◽  
Mid Infrared ◽  
Monolithically Integrated ◽  
Laser Sources

AbstractGermanium (Ge) has played a key role in silicon photonics as an enabling material for datacom applications. Indeed, the unique properties of Ge have been leveraged to develop high performance integrated photodectors, which are now mature devices. Ge is also very useful for the achievement of compact modulators and monolithically integrated laser sources on silicon. Interestingly, research efforts in these domains also put forward the current revolution of mid-IR photonics. Ge and Ge-based alloys also present strong advantages for mid-infrared photonic platform such as the extension of the transparency window for these materials, which can operate at wavelengths beyond 8 μm. Different platforms have been proposed to take benefit from the broad transparency of Ge up to 15 μm, and the main passive building blocks are now being developed. In this review, we will present the most relevant Ge-based platforms reported so far that have led to the demonstration of several passive and active building blocks for mid-IR photonics. Seminal works on mid-IR optical sensing using integrated platforms will also be reviewed.

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