Mesa-structures and Focal Plane Arrays based on epitaxially grown InSb layers

Aspects of epitaxially grown indium antimonide (InSb) on InSb substrates (InSb-on-InSb) by molecular beam epitaxy (MBE) for the 2D focal plane arrays fabrication process have been described. The epitaxial growth offers possibility for complex structure production, and then such structures suppose more effective control of the thermal generation charge carriers as the detector temperature is raised above 80 K. Investigations of mid-wave infrared (MWIR) 320256 FPAs with 30 μm pitch and 640512 FPAs with 15 μm pitch based on InSb-on-InSb layers have shown high performance: the average detectivity at T = 77 K more than 21011 cmW-1Hz1/2, the average value of noise equivalent temperature difference (NETD) with a cold aperture of 60o at T = 77K was in the range of 10–20 mK. High quality thermal imaging images were obtained in real time mode.

Photonic Nanojet Generation Using Integrated Silicon Photonic Chip with Hemispherical Structures

Photonic nanojet (PNJ) is a tightly focused diffractionless travelling beam generated by dielectric microparticles. The location of the PNJ depends on the refractive index of the material and it usually recedes to the interior of the microparticle when the refractive index is higher than 2, making high index materials unsuitable to produce useful PNJs while high index favours narrower PNJs. Here we demonstrate a design of CMOS compatible high index on-chip photonic nanojet based on silicon. The proposed design consists of a silicon hemisphere on a silicon substrate. The PNJs generated can be tuned by changing the radius and sphericity of the hemisphere. Oblate spheroids generate PNJs further away from the refracting surface and the PNJ length exceeds 17𝜆 when the sphericity of the spheroid is 2.25 The proposed device can have potential applications in focal plane arrays, enhanced Raman spectroscopy, and optofluidic chips.

Indium-Based Micro-Bump Array Fabrication Technology with Added Pre-Reflow Wet Etching and Annealing

Indium-based micro-bump arrays, among other things, are used for the bonding of infrared photodetectors and focal plane arrays. In this paper, several aspects of the fabrication technology of micrometer-sized indium bumps with a smooth surface morphology were investigated. The thermal evaporation of indium has been optimized to achieve ~8 μm-thick layers with a small surface roughness of Ra = 11 nm, indicating a high packing density of atoms. This ensures bump uniformity across the sample, as well as prevents oxidation inside the In columns prior to the reflow. A series of experiments to optimize indium bump fabrication technology, including a shear test of single columns, is described. A reliable, repeatable, simple, and quick approach was developed with the pre-etching of indium columns in a 10% HCl solution preceded by annealing at 120 °C in N2.

Performance Enhancement of Inexpensive Glow Discharge Detector Operating in Up-Conversion Mode in Millimeter Wave Detection for Focal Plane Arrays

Performance enhancement of a very inexpensive millimeter-wave (MMW)/terahertz (THz) sensor for MMW/THz imaging systems is experimentally demonstrated in this study. The MMW sensor is composed of a glow discharge detector (GDD) and a light-to-frequency (LTF) converter combination. The experimental results given in this study show an improvement in the performance parameters of the detector element, such as the minimum detectable signal, as well as the signal to noise ratio (SNR) and the noise equivalent power (NEP), when a NIR long-pass filter was inserted between the GDD and the LTF combination. A detailed derivation of the NEP of this unique sensor is presented in this work. Based on this derivation and the experimental measurements, the NEP value was calculated.