Autoelectronic emission and charge relaxation of thorium ions implanted into a thin-film silicon oxide matrix

2021 ◽  
Vol 18 (2) ◽  
pp. 025301
Author(s):  
P V Borisyuk ◽  
E V Chubunova ◽  
N N Kolachevsky ◽  
Yu Yu Lebedinskii ◽  
E V Tkalya ◽  
...  
Keyword(s):  
Thin Film ◽  
Silicon Oxide ◽  
Charge Relaxation ◽  
Thin Film Silicon ◽  
Oxide Matrix

scholarly journals Mixed phase silicon oxide layers for thin-film silicon solar cells

2011 ◽  
Vol 1321 ◽  
Author(s):  
Peter Cuony ◽  
Duncan T.L. Alexander ◽  
Linus Löfgren ◽  
Michael Krumrey ◽  
Michael Marending ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Silicon Oxide ◽  
Nanocrystalline Silicon ◽  
Silicon Solar Cells ◽  
Microstructural Properties ◽  
Microcrystalline Silicon ◽  
Thin Film Silicon ◽  
Transmission Electron ◽  
Doped Silicon

ABSTRACTLower absorption, lower refractive index and tunable resistance are three advantages of doped silicon oxide containing nanocrystalline silicon grains (nc-SiOx) compared to doped microcrystalline silicon, for the use as p- and n-type layers in thin-film silicon solar cells. In this study we show how optical, electrical and microstructural properties of nc-SiOx layers depend on precursor gas ratios and we propose a growth model to explain the phase separation in such films into Si-rich and O-rich regions as visualized by energy-filtered transmission electron microscopy.

Innovative Device Architecture for High Efficiency Thin Film Silicon Solar Cells

2012 ◽  
Vol 1426 ◽  
pp. 131-135
Author(s):  
Mathieu Boccard ◽  
Matthieu Despeisse ◽  
Christophe Ballif
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
High Efficiency ◽  
Silicon Oxide ◽  
Light Trapping ◽  
Electrical Circuit ◽  
Silicon Solar Cells ◽  
Device Architecture ◽  
Thin Film Silicon ◽  
Photovoltaic Technologies

ABSTRACTThe challenge for all photovoltaic technologies is to maximize light absorption, convert photons with minimal losses to electrical charges and efficiently extract them towards the electrical circuit. For thin film silicon solar cells, a compromise must be found as light trapping is usually performed through textured interfaces, that are detrimental to the subsequent growth of dense and high quality silicon layers. We introduce here the concept of smoothening intermediate reflecting layers (IRL), enabling to combine high currents and good electrical quality in Micromorph devices in the superstrate configuration. After exposing the motivation for such structures, we validate the concept by showing a VOCenhancement when employing a polished silicon-oxide-based IRL. Shunting issues and additional reflection losses are pointed out with such technique, highlighting the need to develop alternative techniques for an efficient morphology adaptation before the microcrystalline silicon cell growth.

HAXPES study of CeOx thin film–silicon oxide interface

2014 ◽  
Vol 303 ◽  
pp. 46-53 ◽  
Author(s):  
M. Vorokhta ◽  
I. Matolínová ◽  
M. Dubau ◽  
S. Haviar ◽  
I. Khalakhan ◽  
...  
Keyword(s):  
Thin Film ◽  
Silicon Oxide ◽  
Oxide Interface ◽  
Thin Film Silicon

scholarly journals Optical management in high-efficiency thin-film silicon micromorph solar cells with a silicon oxide based intermediate reflector

2008 ◽  
Vol 2 (4) ◽  
pp. 163-165 ◽  
Author(s):  
Didier Dominé ◽  
Peter Buehlmann ◽  
Julien Bailat ◽  
Adrian Billet ◽  
Andrea Feltrin ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
High Efficiency ◽  
Silicon Oxide ◽  
Thin Film Silicon ◽  
Optical Management
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