Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer

2010 ◽  
Vol 19 (3) ◽  
pp. 036801 ◽  
Author(s):  
Wu Yu-Xin ◽  
Zhu Jian-Jun ◽  
Chen Gui-Feng ◽  
Zhang Shu-Ming ◽  
Jiang De-Sheng ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Layer Thickness ◽  
Structural Properties ◽  
Buffer Layer Thickness ◽  
Aln Buffer

Influence of AlN buffer layer thickness and deposition methods on GaN epitaxial growth

2009 ◽  
Vol 517 (17) ◽  
pp. 5057-5060 ◽  
Author(s):  
J.H. Yang ◽  
S.M. Kang ◽  
D.V. Dinh ◽  
D.H. Yoon
Keyword(s):  
Epitaxial Growth ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Buffer Layer Thickness ◽  
Aln Buffer

The influence of AlN buffer layer thickness on the properties of GaN epilayer

2004 ◽  
Vol 268 (1-2) ◽  
pp. 24-29 ◽  
Author(s):  
J.C Zhang ◽  
D.G Zhao ◽  
J.F Wang ◽  
Y.T Wang ◽  
J Chen ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Layer Thickness ◽  
Buffer Layer Thickness ◽  
Aln Buffer

Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(111) by MOCVD

2008 ◽  
Vol 39 (12) ◽  
pp. 1710-1713 ◽  
Author(s):  
Weijun Luo ◽  
Xiaoliang Wang ◽  
Lunchun Guo ◽  
Hongling Xiao ◽  
Cuimei Wang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Layer Thickness ◽  
Buffer Layer Thickness ◽  
Aln Buffer

Effects of AlN buffer layer thickness on the crystallinity and surface morphology of 10-µm-thicka-plane AlN films grown onr-plane sapphire substrates

2016 ◽  
Vol 9 (8) ◽  
pp. 081001 ◽  
Author(s):  
Chia-Hung Lin ◽  
Shinya Tamaki ◽  
Yasuhiro Yamashita ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu
Keyword(s):  
Surface Morphology ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Sapphire Substrates ◽  
Buffer Layer Thickness ◽  
Aln Buffer

Effects of AlN Buffer Layer Thickness and Al Pre-Treatment on Properties of GaN/Si(111) Epilayer

2013 ◽  
Vol 40 (1) ◽  
pp. 0106001
Author(s):  
廉瑞凯 Lian Ruikai ◽  
李林 Li Lin ◽  
范亚明 Fan Yaming ◽  
王勇 Wang Yong ◽  
邓旭光 Deng Xuguang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Layer Thickness ◽  
Buffer Layer Thickness ◽  
Pre Treatment ◽  
Aln Buffer

Correlation Between the AlN Buffer Layer Thickness and the GaN Polarity in GaN/AlN/Si(111) Grown by MBE

2002 ◽  
Vol 743 ◽  
Author(s):  
A. M. Sanchez ◽  
P. Ruterana ◽  
P. Vennegues ◽  
F. Semond ◽  
F. J. Pacheco ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Buffer Layers ◽  
Nucleation Layer ◽  
Buffer Layer Thickness ◽  
Aln Buffer

ABSTRACTIn this work it is shown that thin AlN buffer layers cause N-polarity GaN epilayers, with a high inversion domains density. When the AlN thickness increases, the polarity of the epilayer changes to Ga. The use of a low temperature AlN nucleation layer leads to a flat AlN/Si(111) interface. This contributes to decrease the inversion domains density in the overgrown GaN epilayer with a Ga polarity.

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