Enhancement of breakdown voltage by AlN buffer layer thickness in AlGaN∕GaN high-electron-mobility transistors on 4in. diameter silicon
2015 ◽
Vol 54
(7)
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pp. 071001
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2016 ◽
Vol 33
(6)
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pp. 067301
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2017 ◽
Vol 56
(10)
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pp. 108003
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2012 ◽
Vol 33
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pp. 1375-1377
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