High order DBR GaSb based single longitude mode diode lasers at 2 μm wavelength

2018 ◽  
Vol 39 (10) ◽  
pp. 104007
Author(s):  
Hao Luo ◽  
Cheng’ao Yang ◽  
Shengwen Xie ◽  
Xiaoli Chai ◽  
Shushan Huang ◽  
...  
Keyword(s):  
Author(s):  
A.S. Payusov ◽  
Yu.M. Shernyakov ◽  
M.M. Kulagina ◽  
A.A. Serin ◽  
M.V. Maximov ◽  
...  

Author(s):  
Н.Ю. Гордеев ◽  
А.С. Паюсов ◽  
И.С. Мухин ◽  
А.А. Серин ◽  
М.М. Кулагина ◽  
...  

AbstractA post-growth technique aimed at spatial modification of facet reflectance of edge-emitting diode lasers has been proposed. It is based on the deposition of an anti-reflection coating and subsequent precise etching with a focused ion beam. The technique allowed suppressing of high-order lateral modes in 10 μm stripe lasers based on ten layers of InAs/InGaAs quantum dots.


1971 ◽  
Vol 18 (5) ◽  
pp. 208-208
Author(s):  
J. K. Butler ◽  
H. S. Sommers

2012 ◽  
Vol 27 (5) ◽  
pp. 055009 ◽  
Author(s):  
J Fricke ◽  
W John ◽  
A Klehr ◽  
P Ressel ◽  
L Weixelbaum ◽  
...  

2015 ◽  
Vol 45 (12) ◽  
pp. 1091-1097 ◽  
Author(s):  
V V Zolotarev ◽  
A Yu Leshko ◽  
N A Pikhtin ◽  
S O Slipchenko ◽  
Z N Sokolova ◽  
...  

2016 ◽  
Vol 740 ◽  
pp. 012003
Author(s):  
V V Zolotarev ◽  
A Yu Leshko ◽  
Z N Sokolova ◽  
Ya V Lubyanskiy ◽  
N A Pikhtin ◽  
...  

2018 ◽  
pp. 347-353
Author(s):  
Huan Li ◽  
Sheng-wen Xie ◽  
Yu Zhang ◽  
Shu-Shan Huang ◽  
Jin-Liang Wang ◽  
...  

1970 ◽  
Vol 17 (9) ◽  
pp. 403-406 ◽  
Author(s):  
J. K. Butler ◽  
H. S. Sommers ◽  
H. Kressel

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