scholarly journals Vortex phase diagram of underdoped YBa2Cu3Oysingle crystals in the magnetic field parallel to theab-plane

2009 ◽  
Vol 150 (5) ◽  
pp. 052270 ◽  
Author(s):  
Y Tokita ◽  
T Nishizaki ◽  
T Sasaki ◽  
N Kobayashi
2020 ◽  
Vol 92 (2) ◽  
pp. 20601
Author(s):  
Abdelaziz Labrag ◽  
Mustapha Bghour ◽  
Ahmed Abou El Hassan ◽  
Habiba El Hamidi ◽  
Ahmed Taoufik ◽  
...  

It is reported in this paper on the thermally assisted flux flow in epitaxial YBa2Cu3O7-δ deposited by Laser ablation method on the SrTiO3 substrate. The resistivity measurements ρ (T, B) of the sample under various values of the magnetic field up to 14T in directions B∥ab-plane and B∥c-axis with a dc weak transport current density were investigated in order to determine the activation energy and then understand the vortex dynamic phenomena and therefore deduce the vortex phase diagram of this material. The apparent activation energy U0 (B) calculated using an Arrhenius relation. The measured results of the resistivity were then adjusted to the modified thermally assisted flux flow model in order to account for the temperature-field dependence of the activation energy U (T, B). The obtained values from the thermally assisted activation energy, exhibit a behavior similar to the one showed with the Arrhenius model, albeit larger than the apparent activation energy with ∼1.5 order on magnitude for both cases of the magnetic field directions. The vortex glass model was also used to obtain the vortex-glass transition temperature from the linear fitting of [d ln ρ/dT ] −1 plots. In the course of this work thanks to the resistivity measurements the upper critical magnetic field Hc2 (T), the irreversibility line Hirr (T) and the crossover field HCrossOver (T) were located. These three parameters allowed us to establish a phase diagram of the studied material where limits of each vortex phase are sketched in order to optimize its applicability as a practical high temperature superconductor used for diverse purposes.


2008 ◽  
Vol 403 (5-9) ◽  
pp. 749-751 ◽  
Author(s):  
Y.J. Jo ◽  
L. Balicas ◽  
C. Capan ◽  
K. Behnia ◽  
P. Lejay ◽  
...  

Author(s):  
И.А. Ларкин ◽  
Ю.Н. Ханин ◽  
Е.Е. Вдовин

The behavior of the photocurrent in GaAs / AlAs p-i-n heterostructures is studied in a magnetic field parallel to the heterolayers in the wavelength range from 395 to 650 nm. A strong dependence of the non-oscillating component of the photocurrent on the radiation wavelength associated with the suppression of the diffusion current by the magnetic field was found. It is shown that the behavior of the oscillating component of the photocurrent in a magnetic field does not depend on the wavelength of light and is determined by the transfer of electrons through the dimensional quantization level in a triangular near-barrier well. It is shown that the suppression of the oscillating component by the magnetic field is due to the smearing of the level in the triangular well due to the motion of electrons parallel to the walls of the well and perpendicular to the magnetic field.


2007 ◽  
Vol 460-462 ◽  
pp. 1204-1205 ◽  
Author(s):  
Norio Kobayashi ◽  
Terukazu Nishizaki ◽  
Kuniaki Kasuga ◽  
Satoru Okayasu

1999 ◽  
pp. 621-624
Author(s):  
Takao Sasagawa ◽  
Toshiya Fujita ◽  
Hisashi Kobayashi ◽  
Jun-Ichi Shimoyama ◽  
Koichi Kitazawa ◽  
...  

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