scholarly journals Calculation Method of DC Limit Power Considering Influence of New-generation Synchronous Condensers

2021 ◽  
Vol 2022 (1) ◽  
pp. 012004
Author(s):  
Zuowei Wang ◽  
Fan Xiao
Keyword(s):  
Calculation Method ◽  
Synchronous Condensers ◽  
New Generation ◽  
Limit Power

Research on Multi-mode Coordination Control Strategy of New- generation Synchronous Condensers and Capacitor Bank

2019 ◽  
Author(s):  
Xiao Fan ◽  
Zhou Youbin ◽  
Zhang jianyun ◽  
Zhou Kunpeng ◽  
Xu Youping ◽  
...  
Keyword(s):  
Control Strategy ◽  
Capacitor Bank ◽  
Coordination Control ◽  
Synchronous Condensers ◽  
New Generation ◽  
Multi Mode

Research on Setting Method of Control Parameters for Excitation system on New- generation Synchronous Condensers

2019 ◽  
Author(s):  
Xiao Fan ◽  
Zhou Youbin ◽  
Zhang jianyun ◽  
Zhou Kunpeng ◽  
Xu Youping ◽  
...  
Keyword(s):  
Control Parameters ◽  
Excitation System ◽  
Synchronous Condensers ◽  
New Generation

Research on the Over-voltage Suppression Strategy for HVDC with New-generation Synchronous Condensers

2019 ◽  
Author(s):  
Fan Xiao ◽  
Youbin Zhou ◽  
jianyun Zhang ◽  
Kunpeng Zhang ◽  
Dan Yang ◽  
...  
Keyword(s):  
Synchronous Condensers ◽  
New Generation ◽  
Suppression Strategy

Finding the Right Problems: Some HREM Applications to Interfaces

1984 ◽  
Vol 42 ◽  
pp. 376-379
Author(s):  
D. Cherns
Keyword(s):  
Grain Boundaries ◽  
High Resolution Electron Microscopy ◽  
Boundary Structure ◽  
Atomic Structures ◽  
Grain Boundary Structure ◽  
Resolution Electron ◽  
Point To Point ◽  
The Right ◽  
New Generation ◽  
Better Than

The use of high resolution electron microscopy (HREM) to determine the atomic structure of grain boundaries and interfaces is a topic of great current interest. Grain boundary structure has been considered for many years as central to an understanding of the mechanical and transport properties of materials. Some more recent attention has focussed on the atomic structures of metalsemiconductor interfaces which are believed to control electrical properties of contacts. The atomic structures of interfaces in semiconductor or metal multilayers is an area of growing interest for understanding the unusual electrical or mechanical properties which these new materials possess. However, although the point-to-point resolutions of currently available HREMs, ∼2-3Å, appear sufficient to solve many of these problems, few atomic models of grain boundaries and interfaces have been derived. Moreover, with a new generation of 300-400kV instruments promising resolutions in the 1.6-2.0 Å range, and resolutions better than 1.5Å expected from specialist instruments, it is an appropriate time to consider the usefulness of HREM for interface studies.

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