scholarly journals Estimation of thermodynamic stability of isoperiodic epitaxial structures whith GaInSbAs and GaInAsP solid solutions

2021 ◽  
Vol 2086 (1) ◽  
pp. 012004
Author(s):  
E M Danilina ◽  
A S Paschenko
Keyword(s):  
Critical Temperature ◽  
Epitaxial Growth ◽  
Internal Energy ◽  
Spinodal Decomposition ◽  
Solid Solutions ◽  
Thermodynamic Stability ◽  
Chemical Changes ◽  
Substrate Interface ◽  
Elastic Stresses ◽  
Selection Of

Abstract The work studied the thermodynamic stability of GaInSbAs, GaInAsP heterosystems on different substrates. The isotherms of spinodal decomposition caused by chemical changes in the internal energy of the alloy and by elastic stresses at the layer-substrate interface are obtained with the model of quasiregular solutions. It has been found that elastic stresses lead to an expansion of the region of thermodynamic stability of isoperiodic solid solutions for GaSb substrates and a decrease in the critical temperature. The developed model can be using to selection of the technological modes and parameters of epitaxial growth.

Isomorphous Substitutions in Luminescent Materials Based on ScVO4

2020 ◽  
Vol 865 ◽  
pp. 37-42
Author(s):  
Lyudmyla I. Ardanova ◽  
Evgeni I. Get'man ◽  
Serhii V. Radio ◽  
Ian M. Hill ◽  
Aleksey V. Ignatov
Keyword(s):  
Rare Earth ◽  
Solid Solutions ◽  
Phase Stability ◽  
Thermodynamic Stability ◽  
Earth Element ◽  
Decomposition Temperature ◽  
Luminescent Materials ◽  
Zircon Structure ◽  
Energy Theory ◽  
Selection Of

The aim of the paper is to define the limits of substitution and phase stability for solidsolutions of orthovanadates with zircon structure Sc1–xLnxVO4, where Ln is a rare-earth element(REE), Ln = Ce – Lu. The mixing energies (interaction parameters) and critical decompositiontemperatures of Sc1–xLnxVO4 solid solutions with the zircon structure were calculated using thecrystal-energy theory of isomorphous miscibility. Diagram of thermodynamic stability visualizingthe substitution limits (x) by the decomposition temperature or the decomposition temperature bythe substitution limits, the dependencies of the decomposition temperatures on the REE atomicnumbers is presented. This diagram also allows assessing areas of stability, instability, andmetastability for Sc1–xLnxVO4 solid solutions. Results of calculations were compared with literaturedata on thermodynamic stability of solid solutions and on substitution limits. The results of thisstudy can be used in the development of new luminescent materials based on ScVO4 modified withREE, in the selection of REE for matrix and activator, in defining optimal proportions of REE inSc1–xLnxVO4 matrices.

Critical Temperature for Phase Separation of the Solid Solutions of Rare Gases

Nature ◽  
1956 ◽  
Vol 178 (4530) ◽  
pp. 431-432 ◽  
Author(s):  
G. D. HALSEY ◽  
MARK P. FREEMAN
Keyword(s):  
Phase Separation ◽  
Critical Temperature ◽  
Solid Solutions ◽  
Rare Gases

scholarly journals Some Aspects of Spinodal Decomposition in Spinel Solid Solutions

1995 ◽  
Vol 50 (6) ◽  
pp. 525-532
Author(s):  
N. Burkert ◽  
R. Grüne ◽  
H. Schmalzried ◽  
S. Rahman
Keyword(s):  
Spinodal Decomposition ◽  
Solid Solutions ◽  
Common Property ◽  
Transport Theory ◽  
Decomposition Reaction ◽  
Sufficient Evidence ◽  
Spinel Crystal ◽  
Linear Transport Theory ◽  
Spinel Solid Solutions ◽  
Quasi Binary System

Abstract Decomposition morphologies of supersaturated spinel solid solutions in the quasi-binary system Co2TiO4-CoAl2O4 at 973 K show all pertinent features of spinodal decomposition. Since the decomposition morphology may not be considered as sufficient evidence for a spinodal process, the thermodynamics of the spinel solid solutions and the linear transport theory of spinodal decomposition were combined to corroborate the experimental results of the early decomposition reaction.Simultaneous ordering, a common property of ternary and higher nonequilibrium solid solutions, was also observed. These ordering processes occur locally in distinct regions of the spinel crystal. Moreover, the spinodal wavelength λ increases in time according to λ ∞ t, which is unusual and will be discussed in the light of cation diffusion in semiconducting oxides with two cation sublattices.

Supersaturated solid solutions after solid phase epitaxial growth in Bi‐implanted silicon

1980 ◽  
Vol 37 (2) ◽  
pp. 170-172 ◽  
Author(s):  
S. U. Campisano ◽  
E. Rimini ◽  
P. Baeri ◽  
G. Foti
Keyword(s):  
Epitaxial Growth ◽  
Solid Solutions ◽  
Solid Phase ◽  
Supersaturated Solid Solutions

In Situ Measurements of Stress Relaxation During Strained Layer Heteroepitaxy

1999 ◽  
Vol 583 ◽  
Author(s):  
E. Chason ◽  
J. Yin ◽  
K. Tetz ◽  
R. Beresford ◽  
L. B. Freund ◽  
...  
Keyword(s):  
Elevated Temperature ◽  
Stress Relaxation ◽  
Epitaxial Growth ◽  
Real Time ◽  
Misfit Strain ◽  
Misfit Stress ◽  
Relaxation Kinetics ◽  
Substrate Interface ◽  
Temperature Relaxation

AbstractWe present real-time measurements of stress relaxation kinetics during epitaxial growth obtained using a wafer-curvature-based technique optimized for in situ studies. Depending on the temperature and misfit strain, different mechanisms of stress relaxation are observed. In heterolayers of InGaAs grown on GaAs (001) substrates, relaxation occurs by a dislocationmediated mechanism. In SiGe layers grown on Si (001) substrates at elevated temperature, relaxation occurs by the formation of islands on the surface. These islands elastically relax misfit stress without the introduction of dislocations at the island-substrate interface.

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