Deposition of GaN nanoparticles on the surface of a copper film under the action of electrostatic field during the femtosecond laser ablation synthesis in ammonia environment

In this article, we show the possibility for obtaining and deposition of gallium nitride nanoparticles under the action of femtosecond laser radiation. Using the developed setup for thermal vacuum deposition of copper on silicon plates, we obtained the thin-film substrates following by the deposition of gallium nitride on them. The gallium nitride was formed by applying the femtosecond laser radiation to the gallium targets in ammonia medium. The controlled collection of ablation products following by their removal from the processing area by means of electrostatic field was used in the setup in order to efficiently collect gallium nitride nanoparticles. The formation of gallium nitride nanoparticles is verified by the results of X-ray diffraction analysis.