scholarly journals Influence of a high-frequency pulsed nanosecond diffusion discharge in the nitrogen atmosphere on the electrical characteristics of a CdHgTe epitaxial films

2017 ◽  
Vol 830 ◽  
pp. 012082 ◽  
Author(s):  
D Grigoryev ◽  
A Voitsekhovskii ◽  
A Korotaev ◽  
D Lyapunov ◽  
K Lozovoy ◽  
...  
Keyword(s):  
High Frequency ◽  
Epitaxial Films ◽  
Nitrogen Atmosphere ◽  
Electrical Characteristics

Comparison of Structural and Electrical Characteristics of Solid-Phase Epitaxial Films Recrystallized By Rapid Thermal Annealing and Furnace Annealing

1985 ◽  
Vol 53 ◽  
Author(s):  
R. Sundaresan ◽  
P.-H. Chang ◽  
S.D.S. Malhi ◽  
H.W. Lam
Keyword(s):  
Solid Phase ◽  
Epitaxial Films ◽  
Electrical Characteristics ◽  
Lateral Extension ◽  
Rapid Thermal Anneal ◽  
Furnace Annealing ◽  
Layer 4 ◽  
Polysilicon Films ◽  
Average Electron ◽  
Temperature Furnace

ABSTRACTSolid-phase epitaxial regrowth of polysilicon films. amorphized by a room-temperature silicon implant. has been achieved using a (low temperature) furnace anneal or a (high temperature) rapid thermal anneal. Lateral extension of the growth onto an oxide layer, 4 μm wide, has also been observed. The electrical properties of the films were examined by building MO2S devices in them. Average electron mobilities of 520 cm2/v-sec and 200 cm2/v-sec have been measured for films regrown on top of silicon and oxide respectively.

Thermal and electrical characteristics of a high-frequency electrothermal fluidization bed

1972 ◽  
Vol 22 (6) ◽  
pp. 665-669
Author(s):  
K. I. Bashlai ◽  
I. F. Barantsev ◽  
M. B. Grinbaum ◽  
V. M. Stanyakin ◽  
V. V. Samodurov ◽  
...  
Keyword(s):  
High Frequency ◽  
Electrical Characteristics

Demonstration of Superior Static, Dynamic, and Short-Circuit Performance of 1.2 kV 4H-SiC Split-Gate Octagonal Cell MOSFETs Compared with Linear, Square, and Hexagonal Topologies

2020 ◽  
Vol 1004 ◽  
pp. 783-788
Author(s):  
Ki Jeong Han ◽  
Ajit Kanale ◽  
B. Jayant Baliga ◽  
Subhashish Bhattacharya
Keyword(s):  
Energy Loss ◽  
High Frequency ◽  
Figure Of Merit ◽  
Short Circuit ◽  
Electrical Characteristics ◽  
Circuit Performance ◽  
Switching Performance ◽  
Switching Energy ◽  
Cell Topology ◽  
Linear Cell

The electrical characteristics of the 1.2-kV rated 4H-SiC accumulation-channel split-gate octagonal cell MOSFET (SG-OCTFET) are experimentally compared with linear, square, hexagonal, octagonal, and compact-octagonal cell topologies. The specific on-resistance of the SG-OCTFET is 52% larger than the conventional linear cell topology. However, the SG-OCTFET has: (i) high-frequency figure-of-merit HFFOM[Ron×Cgd] 9.4×, 6.1×, 2.6×, 2.0×, and 1.8× superior to the square, hex, linear, octagonal, and compact-octagonal cells; (ii) fastest switching performance among all cell topologies, with 26% smaller switching energy loss than the conventional linear cell topology; and (iii) short circuit capability 1.5× longer than the conventional linear cell topology. The SG-OCTFET device is therefore an optimum candidate for high frequency applications of SiC MOSFETs.

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