Broadband and ultrafast all-optical switching based on transition metal carbide

Ultrafast all-optical switches have attracted considerable attention for breaking through the speed limitation of electric devices. However, ultrafast and high-efficiency all-optical switches based on two-dimensional (2D) materials can be achieved due to their strong nonlinear optical response and ultrafast carrier dynamic. For this reason, we propose the pump-probe method to achieve an ultrafast optical switcher with a response time of 192 fs and a switching energy of 800 nJ by using transition metal carbide (Nb2C). The response time and switching energy are far smaller than that of the all-optical device based on the saturable absorption effect of 2D materials. It is believed that the Nb2C-based all-optical switch provides a novel idea to achieve a high-performance all-optical device and has the potential for application in high-speed photonics processing.

Switching energy dissipation pathway: in situ proton-induced transformation of AIE-active self-assemblies to boost photodynamic therapy

With the morphological transformation of fluorescent self-assembled nanostructures, their functions can be varied simultaneously.

SEPIC Converter with an LC Regenerative Snubber for EV Applications

A Single-Ended Primary-Inductor Converter (SEPIC) converter with an Inductor-Capacitor (LC) regenerative snubber is proposed to reduce Electromagnetic Interference (EMI) for Electric Vehicle (EV) applications. The switching energy is transferred through a capacitor to an inductor which is coupled to SEPIC inductors. This technique reduces the number of components and also returns some of switching energy to SEPIC converter. The mathematical analysis and optimization of LC snubber with respect to number of turns is also presented. Spice simulations and experimental results are provided to verify its performance. The proposed LC regenerative snubber reduces the peak voltage by 16 V on the switching transistor during the switching transient. It is also indicated that 8 dB reduction is achieved in the EMI measurements at ringing frequency and 10 dB reduction at high frequency band.