Thermal pretreatment of diamond wire sawn multi-crystalline silicon wafers for wet acid texturization of solar cells

2018 ◽  
Vol 6 (2) ◽  
pp. 025911
Author(s):  
Jinbing Zhang ◽  
Hongping Fu ◽  
Xingfang Ye ◽  
Lang Zhou
2017 ◽  
Vol 130 ◽  
pp. 55-59 ◽  
Author(s):  
Y.H. Lin ◽  
F.M. Huang ◽  
H.C. Wu ◽  
C.H. Yeh ◽  
C.C. Chang ◽  
...  

1994 ◽  
Vol 37-38 ◽  
pp. 355-360 ◽  
Author(s):  
A.W. Weeber ◽  
H.H.C. de Moor ◽  
R.A. Steeman ◽  
W.C. Sinke ◽  
F. Schuurmans ◽  
...  

2003 ◽  
Vol 95-96 ◽  
pp. 205-210
Author(s):  
Daniela Cavalcoli ◽  
Anna Cavallini ◽  
Marco Rossi ◽  
Kristian Peter

Energies ◽  
2020 ◽  
Vol 13 (18) ◽  
pp. 4890
Author(s):  
Tian Pu ◽  
Honglie Shen ◽  
Chaofan Zheng ◽  
Yajun Xu ◽  
Ye Jiang ◽  
...  

The absence of an effective texturing technique for diamond-wire sawn multi-crystalline silicon (DWS mc-Si) solar cells has hindered commercial upgrading from traditional multi-wire slurry sawn silicon (MWSS mc-Si) solar cells. In this work, we present a novel method for the removal of diamond-wire-sawn marks in a multi-crystalline silicon wafer based on metal assisted chemical etching process with Cu/Ag dual elements and nano-structure rebuilding (NSR) treatment to make a uniform inverted pyramid textured structure. The temperature effect of NSR solution was systematically analyzed. It was found that the size of the inverted pyramid structure and the reflectance became larger with the increase of the NSR treatment temperature. Furthermore, the prepared unique inverted pyramid structure not only benefited light trapping, but also effectively removed the saw-marks of the wafer at the same time. The highest efficiency of 19.77% was obtained in solar cells with an inverted pyramid structure (edge length of 600 nm) fabricated by NSR treatment at 50 °C for 360 s, while its average reflectance was 16.50% at a 400–900 nm wavelength range.


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