Coulomb Scattering in Aluminum without Atomic Excitation for 1-MeV Electrons

1965 ◽  
Vol 138 (1A) ◽  
pp. A12-A14 ◽  
Author(s):  
David H. Rester ◽  
Walter J. Rainwater
1963 ◽  
Vol 132 (6) ◽  
pp. 2558-2561 ◽  
Author(s):  
J. W. Motz ◽  
R. C. Placious ◽  
C. E. Dick

1965 ◽  
Vol 140 (1A) ◽  
pp. A165-A168 ◽  
Author(s):  
David H. Rester ◽  
Walter J. Rainwater

2021 ◽  
Vol 2021 (1) ◽  
Author(s):  
Hyun Min Lee

Abstract Motivated by the recent excess in the electron recoil from XENON1T experiment, we consider the possibility of exothermic dark matter, which is composed of two states with mass splitting. The heavier state down-scatters off the electron into the lighter state, making an appropriate recoil energy required for the Xenon excess even for the standard Maxwellian velocity distribution of dark matter. Accordingly, we determine the mass difference between two component states of dark matter to the peak electron recoil energy at about 2.5 keV up to the detector resolution, accounting for the recoil events over ER = 2 − 3 keV, which are most significant. We include the effects of the phase-space enhancement and the atomic excitation factor to calculate the required scattering cross section for the Xenon excess. We discuss the implications of dark matter interactions in the effective theory for exothermic dark matter and a massive Z′ mediator and provide microscopic models realizing the required dark matter and electron couplings to Z′.


Author(s):  
S.A. Akimenko ◽  
V.I. Belousov ◽  
A.M. Blik ◽  
G.I. Britvich ◽  
V.N. Kolosov ◽  
...  

1968 ◽  
Vol 46 (10) ◽  
pp. S201-S203
Author(s):  
V. V. Guzhavin ◽  
I. P. Ivanenko ◽  
B. E. Samosudov

An analytical solution of the angular problem to the approximation of middle angles which is valid for any angles of particle deviation in an elementary event of Coulomb scattering has been obtained using the approximate operator (Vaskin et al. 1966). The proposed method makes it possible to evaluate the accuracy of the resulting expressions and the contribution from non-multiple and multiple Coulomb scattering.


2014 ◽  
Vol 105 (20) ◽  
pp. 201109 ◽  
Author(s):  
S. Zybell ◽  
J. Bhattacharyya ◽  
S. Winnerl ◽  
F. Eßer ◽  
M. Helm ◽  
...  
Keyword(s):  

2007 ◽  
Vol 556-557 ◽  
pp. 835-838 ◽  
Author(s):  
Amador Pérez-Tomás ◽  
Michael R. Jennings ◽  
Philip A. Mawby ◽  
James A. Covington ◽  
Phillippe Godignon ◽  
...  

In prior work we have proposed a mobility model for describing the mobility degradation observed in SiC MOSFET devices, suitable for being implemented into a commercial simulator, including Coulomb scattering effects at interface traps. In this paper, the effect of temperature and doping on the channel mobility has been modelled. The computation results suggest that the Coulomb scattering at charged interface traps is the dominant degradation mechanism. Simulations also show that a temperature increase implies an improvement in field-effect mobility since the inversion channel concentration increases and the trapped charge is reduced due to bandgap narrowing. In contrast, increasing the substrate impurity concentration further degrades the fieldeffect mobility since the inversion charge concentration decreases for a given gate bias. We have good agreement between the computational results and experimental mobility measurements.


Physica B+C ◽  
1983 ◽  
Vol 117-118 ◽  
pp. 646-648 ◽  
Author(s):  
R.A. Höpfel ◽  
E. Gornik ◽  
A.C. Gossard ◽  
W. Wiegmann

1980 ◽  
Vol 45 (9) ◽  
pp. 703-706 ◽  
Author(s):  
W. J. Thompson ◽  
J. F. Wilkerson ◽  
T. B. Clegg ◽  
J. M. Feagin ◽  
E. J. Ludwig ◽  
...  

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