Twist-induced preferential distribution of dopants in single-crystalline Si nanowires

2019 ◽  
Vol 100 (17) ◽  
Author(s):  
Xing-Ju Zhao ◽  
Gotthard Seifert ◽  
Junyi Zhu ◽  
Dong-Bo Zhang
Keyword(s):  
Si Nanowires ◽  
Single Crystalline ◽  
Preferential Distribution

scholarly journals Twist-driven separation of p-type and n-type dopants in single-crystalline nanowires

2019 ◽  
Vol 6 (3) ◽  
pp. 532-539 ◽  
Author(s):  
Dong-Bo Zhang ◽  
Xing-Ju Zhao ◽  
Gotthard Seifert ◽  
Kinfai Tse ◽  
Junyi Zhu
Keyword(s):  
Shear Strain ◽  
Radial Distribution ◽  
Atomistic Simulations ◽  
Si Nanowires ◽  
Modulation Doping ◽  
Single Crystalline ◽  
Host Atom ◽  
Homogeneous Materials ◽  
Radial Dimension ◽  
P Type

The distribution of dopants significantly influences the properties of semiconductors, yet effective modulation and separation of p-type and n-type dopants in homogeneous materials remain challenging, especially for nanostructures. Employing a bond orbital model with supportive atomistic simulations, we show that axial twisting can substantially modulate the radial distribution of dopants in Si nanowires (NWs) such that dopants of smaller sizes than the host atom prefer atomic sites near the NW core, while dopants of larger sizes are prone to staying adjacent to the NW surface. We attribute such distinct behaviors to the twist-induced inhomogeneous shear strain in NW. With this, our investigation on codoping pairs further reveals that with proper choices of codoping pairs, e.g. B and Sb, n-type and p-type dopants can be well separated along the NW radial dimension. Our findings suggest that twisting may lead to realizations of p–n junction configuration and modulation doping in single-crystalline NWs.

Centimeter-Long Single-Crystalline Si Nanowires

Nano Letters ◽  
2017 ◽  
Vol 17 (12) ◽  
pp. 7323-7329 ◽  
Author(s):  
Bing-Chang Zhang ◽  
Hui Wang ◽  
Le He ◽  
Cai-Jun Zheng ◽  
Jian-Sheng Jie ◽  
...  
Keyword(s):  
Si Nanowires ◽  
Single Crystalline

Lightly doped single crystalline porous Si nanowires with improved optical and electrical properties

2011 ◽  
Vol 21 (3) ◽  
pp. 801-805 ◽  
Author(s):  
Huihui Chen ◽  
Rujia Zou ◽  
Haihua Chen ◽  
Na Wang ◽  
Yangang Sun ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Optical And Electrical Properties ◽  
Porous Si ◽  
Si Nanowires ◽  
Single Crystalline

Ultrafast growth of single-crystalline Si nanowires

2006 ◽  
Vol 60 (17-18) ◽  
pp. 2125-2128 ◽  
Author(s):  
J.B. Chang ◽  
J.Z. Liu ◽  
P.X. Yan ◽  
L.F. Bai ◽  
Z.J. Yan ◽  
...  
Keyword(s):  
Si Nanowires ◽  
Single Crystalline

Fabrication of vertically stacked single-crystalline Si nanowires using self-limiting oxidation

2011 ◽  
Vol 23 (1) ◽  
pp. 015307 ◽  
Author(s):  
Tao Wang ◽  
Bin Yu ◽  
Yan Liu ◽  
Qing Guo ◽  
Kuang Sheng ◽  
...  
Keyword(s):  
Si Nanowires ◽  
Single Crystalline

Hybrid Solar Cells Based on Bulk Heterojunction Films of Conjugated Polymers and Single Crystalline Si Nanowires

2010 ◽  
Vol 5 (2) ◽  
pp. 139-142 ◽  
Author(s):  
Sungho Woo ◽  
Seungsoo Lee ◽  
Yoon Soo Han ◽  
Hongkun Lyu ◽  
Kangpil Kim ◽  
...  
Keyword(s):  
Solar Cells ◽  
Conjugated Polymers ◽  
Bulk Heterojunction ◽  
Hybrid Solar Cells ◽  
Si Nanowires ◽  
Single Crystalline

scholarly journals Synthesis and Optoelectronic Characteristics of Single-crystalline Si Nanowires

2005 ◽  
Vol 6 (5) ◽  
pp. 198-201
Author(s):  
Kyung-Hwan Kim ◽  
Ki-Hyun Keem ◽  
Jeong-Min Kang ◽  
Chang-Joon Yoon ◽  
Dong-Young Jeong ◽  
...  
Keyword(s):  
Si Nanowires ◽  
Single Crystalline

scholarly journals Approaching the ideal elastic strain limit in silicon nanowires

2016 ◽  
Vol 2 (8) ◽  
pp. e1501382 ◽  
Author(s):  
Hongti Zhang ◽  
Jerry Tersoff ◽  
Shang Xu ◽  
Huixin Chen ◽  
Qiaobao Zhang ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Flexible Electronics ◽  
Elastic Strain ◽  
Building Blocks ◽  
Strain Engineering ◽  
Si Nanowires ◽  
Single Crystalline ◽  
Strain Limit ◽  
High Elasticity ◽  
The Ideal

Achieving high elasticity for silicon (Si) nanowires, one of the most important and versatile building blocks in nanoelectronics, would enable their application in flexible electronics and bio-nano interfaces. We show that vapor-liquid-solid–grown single-crystalline Si nanowires with diameters of ~100 nm can be repeatedly stretched above 10% elastic strain at room temperature, approaching the theoretical elastic limit of silicon (17 to 20%). A few samples even reached ~16% tensile strain, with estimated fracture stress up to ~20 GPa. The deformations were fully reversible and hysteresis-free under loading-unloading tests with varied strain rates, and the failures still occurred in brittle fracture, with no visible sign of plasticity. The ability to achieve this “deep ultra-strength” for Si nanowires can be attributed mainly to their pristine, defect-scarce, nanosized single-crystalline structure and atomically smooth surfaces. This result indicates that semiconductor nanowires could have ultra-large elasticity with tunable band structures for promising “elastic strain engineering” applications.

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