scholarly journals Approaching the ideal elastic strain limit in silicon nanowires

2016 ◽  
Vol 2 (8) ◽  
pp. e1501382 ◽  
Author(s):  
Hongti Zhang ◽  
Jerry Tersoff ◽  
Shang Xu ◽  
Huixin Chen ◽  
Qiaobao Zhang ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Flexible Electronics ◽  
Elastic Strain ◽  
Building Blocks ◽  
Strain Engineering ◽  
Si Nanowires ◽  
Single Crystalline ◽  
Strain Limit ◽  
High Elasticity ◽  
The Ideal

Achieving high elasticity for silicon (Si) nanowires, one of the most important and versatile building blocks in nanoelectronics, would enable their application in flexible electronics and bio-nano interfaces. We show that vapor-liquid-solid–grown single-crystalline Si nanowires with diameters of ~100 nm can be repeatedly stretched above 10% elastic strain at room temperature, approaching the theoretical elastic limit of silicon (17 to 20%). A few samples even reached ~16% tensile strain, with estimated fracture stress up to ~20 GPa. The deformations were fully reversible and hysteresis-free under loading-unloading tests with varied strain rates, and the failures still occurred in brittle fracture, with no visible sign of plasticity. The ability to achieve this “deep ultra-strength” for Si nanowires can be attributed mainly to their pristine, defect-scarce, nanosized single-crystalline structure and atomically smooth surfaces. This result indicates that semiconductor nanowires could have ultra-large elasticity with tunable band structures for promising “elastic strain engineering” applications.

scholarly journals High elasticity and strength of ultra-thin metallic transition metal dichalcogenides

2021 ◽  
Author(s):  
Ali Sheraz ◽  
Naveed Mehmood ◽  
Mert Mirac Cicek ◽  
İbrahim Ergün ◽  
Hamid Reza Rasouli ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Transition Metal ◽  
Flexible Electronics ◽  
Transition Metal Dichalcogenides ◽  
High Elasticity ◽  
Metal Dichalcogenides

Mechanical properties of transition metal dichalcogenides (TMDCs) are relevant to their prospective applications in flexible electronics. So far, the focus has been on the semiconducting TMDCs, mostly MoX2 and WX2...

Size-Dependent Elasticity of Silicon Nanowires

2009 ◽  
Vol 60-61 ◽  
pp. 315-319 ◽  
Author(s):  
W.W. Zhang ◽  
Qing An Huang ◽  
H. Yu ◽  
L.B. Lu
Keyword(s):  
Molecular Dynamics ◽  
Molecular Dynamics Simulations ◽  
Silicon Nanowires ◽  
First Principles ◽  
Si Nanowires ◽  
Size Dependent ◽  
Reconstructed Surfaces ◽  
Strain Relationship ◽  
Dynamics Simulations ◽  
Good Agreement

Molecular dynamics simulations are carried out to characterize the mechanical properties of [001] and [110] oriented silicon nanowires, with the thickness ranging from 1.05nm to 3.24 nm. The nanowires are taken to have ideal surfaces and (2×1) reconstructed surfaces, respectively. A series of simulations for square cross-section Si nanowires have been performed and Young’s modulus is calculated from energy–strain relationship. The results show that the elasticity of Si nanowires is strongly depended on size and surface reconstruction. Furthermore, the physical origin of above results is analyzed, consistent with the bond loss and saturation concept. The results obtained from the molecular dynamics simulations are in good agreement with the values of first-principles. The molecular dynamics simulations combine the accuracy and efficiency.

Self-diffusion in single crystalline silicon nanowires

2018 ◽  
Vol 123 (16) ◽  
pp. 161515 ◽  
Author(s):  
T. Südkamp ◽  
G. Hamdana ◽  
M. Descoins ◽  
D. Mangelinck ◽  
H. S. Wasisto ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Crystalline Silicon ◽  
Single Crystalline Silicon ◽  
Single Crystalline ◽  
Self Diffusion

Bottom-up nanoscale patterning and selective deposition on silicon nanowires

2021 ◽  
Author(s):  
Amar Mohabir ◽  
Daniel Aziz ◽  
Amy Brummer ◽  
Kathleen Taylor ◽  
Eric Vogel ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
Electronic Devices ◽  
Spatial Relationship ◽  
Atomic Layer ◽  
Semiconductor Nanowires ◽  
Si Nanowires ◽  
Bottom Up ◽  
Nanoscale Patterning ◽  
Layer Deposition ◽  
Dopant Profile

Abstract We demonstrate a bottom-up process for programming the deposition of coaxial thin films aligned to the underlying dopant profile of semiconductor nanowires. Our process synergistically combines three distinct methods – vapor-liquid-solid (VLS) nanowire growth, selective coaxial lithography via etching of surfaces (SCALES), and area-selective atomic layer deposition (AS-ALD) – into a cohesive whole. Here, we study ZrO2 on Si nanowires as a model system. Si nanowires are first grown with an axially modulated n-Si/i-Si dopant profile. SCALES then yields coaxial poly(methyl methacrylate) (PMMA) masks on the n-Si regions. Subsequent AS-ALD of ZrO2 occurs on the exposed i-Si regions and not on those masked by PMMA. We show the spatial relationship between nanowire dopant profile, PMMA masks, and ZrO2 films, confirming the programmability of the process. The nanoscale resolution of our process coupled with the plethora of available AS-ALD chemistries promises a range of future opportunities to generate structurally complex nanoscale materials and electronic devices using entirely bottom-up methods.

Low-Energy Ion Irradiated Silicon Nanowires: Anomalous Plastic Deformation

2018 ◽  
Vol 4 (2) ◽  
Author(s):  
Chu Rainer Kwang-Hua
Keyword(s):  
Plastic Deformation ◽  
Silicon Nanowires ◽  
Room Temperature ◽  
Transition State Theory ◽  
State Theory ◽  
Si Nanowires ◽  
Temperature Dependent ◽  
Temperature Dependent Viscosity ◽  
Si Nanowire ◽  
Dependent Viscosity

We adopted the verified transition state theory, which originates from the quantum chemistry approach to explain the anomalous plastic flow or plastic deformation for Si nanowires irradiated with 100 keV (at room temperature regime) Ar+ ions as well as the observed amorphization along the Si nanowire (Johannes, et al. 2015, “Anomalous Plastic Deformation and Sputtering of Ion Irradiated Silicon Nanowires,” Nano Lett., 15, pp. 3800–3807). We shall illustrate some formulations which can help us calculate the temperature-dependent viscosity of flowing Si in nanodomains.

Direct Synthesis of Silicon Nanowires using Silane and Molten Gallium

2002 ◽  
Vol 737 ◽  
Author(s):  
Shashank Sharma ◽  
Mahendra K. Sunkara ◽  
Elizabeth C. Dickey
Keyword(s):  
Silicon Nanowires ◽  
Crystalline Silicon ◽  
Direct Synthesis ◽  
Growth Direction ◽  
Single Crystalline ◽  
Gas Phase Chemistry ◽  
Transmission Electron ◽  
Phase Chemistry ◽  
First Time ◽  
Low Solubility

ABSTRACTWe report for the first time, bulk synthesis of single crystalline silicon nanowires using molten gallium pools and an activated vapor phase containing silane. The resulting silicon nanowires were single crystalline with <100> growth direction. Nanowires contained an unexpectedly thin, non-uniform oxide sheath determined using high-resolution Transmission Electron Microscopy (TEM). Nanowires were tens of nanometers in diameter and tens to hundreds of microns long. The use of activated gas phase chemistry containing solute of interest over molten metal pools of low-solubility eutectics such as gallium offer a viable route to generate nanowire systems containing abrupt compositional hetero-interfaces.

scholarly journals Nonvolatile modulation of electronic structure and correlative magnetism of L10-FePt films using significant strain induced by shape memory substrates

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Chun Feng ◽  
Jiancheng Zhao ◽  
Feng Yang ◽  
Kui Gong ◽  
Shijie Hao ◽  
...  
Keyword(s):  
Shape Memory ◽  
Elastic Strain ◽  
Lattice Strain ◽  
Physical Nature ◽  
Strain Engineering ◽  
Strain Effect ◽  
Pure Strain ◽  
Electronic Density ◽  
Fept Film ◽  
Novel Approach

Abstract Tuning the lattice strain (εL) is a novel approach to manipulate the magnetic, electronic and transport properties of spintronic materials. Achievable εL in thin film samples induced by traditional ferroelectric or flexible substrates is usually volatile and well below 1%. Such limits in the tuning capability cannot meet the requirements for nonvolatile applications of spintronic materials. This study answers to the challenge of introducing significant amount of elastic strain in deposited thin films so that noticeable tuning of the spintronic characteristics can be realized. Based on subtle elastic strain engineering of depositing L10-FePt films on pre-stretched NiTi(Nb) shape memory alloy substrates, steerable and nonvolatile lattice strain up to 2.18% has been achieved in the L10-FePt films by thermally controlling the shape memory effect of the substrates. Introduced strains at this level significantly modify the electronic density of state, orbital overlap and spin-orbit coupling (SOC) strength in the FePt film, leading to nonvolatile modulation of magnetic anisotropy and magnetization reversal characteristics. This finding not only opens an efficient avenue for the nonvolatile tuning of SOC based magnetism and spintronic effects, but also helps to clarify the physical nature of pure strain effect.

scholarly journals Elastic strain engineering for unprecedented materials properties

MRS Bulletin ◽  
2014 ◽  
Vol 39 (2) ◽  
pp. 108-114 ◽  
Author(s):  
Ju Li ◽  
Zhiwei Shan ◽  
Evan Ma
Keyword(s):  
Elastic Strain ◽  
Strain Engineering ◽  
Materials Properties ◽  
Image Position

Abstract

scholarly journals Single Crystalline Mesoporous Silicon Nanowires

Nano Letters ◽  
2009 ◽  
Vol 9 (10) ◽  
pp. 3550-3554 ◽  
Author(s):  
Allon I. Hochbaum ◽  
Daniel Gargas ◽  
Yun Jeong Hwang ◽  
Peidong Yang
Keyword(s):  
Silicon Nanowires ◽  
Mesoporous Silicon ◽  
Single Crystalline

Synthesis of Silicon Nanowires and their Heterostructures by Thermal Chemical Vapor Deposition

2005 ◽  
Vol 879 ◽  
Author(s):  
Woo-Sung Jang ◽  
Seung Yong Bae ◽  
Jeunghee Park
Keyword(s):  
Silicon Nanowires ◽  
Chemical Vapor ◽  
Average Diameter ◽  
Growth Conditions ◽  
Nitride Layer ◽  
Growth Direction ◽  
Thermal Reaction ◽  
Si Nanowires ◽  
Oxide Mixture ◽  
Thermal Chemical Vapor Deposition

AbstractThe Si nanowires were synthesized using a novel catalytic thermal reaction under Ar flow. The average diameter is in the range of 50 ∼ 100 nm. They consist of defect-free single-crystalline cubic structure with the [111] growth direction. The thickness of amorphous oxide outer layers was controllable by growth conditions or surface treatment. In order to protect the oxidation, the Si nanowires were coated with boron nitride layer by the reaction of boron oxide mixture with NH3.

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