Possible antiferroelectric-to-ferroelectric transition and metallic antiferroelectricity caused by charge doping in 
PbZrO3

Relaxor ferroelectrics, such as Pb(Mg1/3Nb2/3)O3 (PMN) or (Pb·88La ·12)(Zr·65Ti·35)O3 (PLZT), show diffuse ferroelectric transition which depends upon frequency of the a.c. field. In spite of their wide use in various applications details of their atomic structure and the mechanism of relaxor ferroelectric transition are not sufficiently understood. While their crystallographic structure is cubic perovskite, ABO3, their thermal factors (apparent amplitude of thermal vibration) is quite large, suggesting local displacive disorder due to heterovalent ion mixing. Electron microscopy suggests nano-scale structural as well as chemical inhomogeneity.We have studied the atomic structure of these solids by pulsed neutron scattering using the atomic pair-distribution analysis. The measurements were made at the Intense Pulsed Neutron Source (IPNS) of Argonne National Laboratory. Pulsed neutrons are produced by a pulsed proton beam accelerated to 750 MeV hitting a uranium target at a rate of 30 Hz. Even after moderation by a liquid methane moderator high flux of epithermal neutrons with energies ranging up to few eV’s remain.

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Theoretical studies of the ferroelectric transition

Uspekhi Fizicheskih Nauk ◽

10.3367/ufnr.0179.200906g.0639 ◽

2009 ◽

Vol 179 (6) ◽

pp. 639 ◽

Cited By ~ 4

Author(s):

Evgenii G. Maksimov

Keyword(s):

Theoretical Studies ◽

Ferroelectric Transition

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New oxide diluted magnetic semiconductor La0.75Ca0.25Cu0.75Mn0.25SO with independent spin and charge doping by first -principle study

Journal of Physics Conference Series ◽

10.1088/1742-6596/1293/1/012007 ◽

2019 ◽

Vol 1293 ◽

pp. 012007

Author(s):

Haoze Chen ◽

Linxian Li ◽

Sheng Wang ◽

Yuke Li ◽

Jianye Chen ◽

...

Keyword(s):

Diluted Magnetic Semiconductor ◽

Magnetic Semiconductor ◽

First Principle ◽

Charge Doping ◽

Diluted Magnetic

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Charge-doping-induced variation of the superconducting BaFe2As2 electronic structure and the emerging physical effects: a DFT+DMFT study

Journal of Materials Science ◽

10.1007/s10853-021-06210-8 ◽

2021 ◽

Author(s):

Mehdi Hesani ◽

Kourosh Rahimi ◽

Ahmad Yazdani

Keyword(s):

Electronic Structure ◽

Charge Doping ◽

Physical Effects ◽

Induced Variation

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Spatial Control of Charge Doping in n-Type Topological Insulators

Nano Letters ◽

10.1021/acs.nanolett.1c01100 ◽

2021 ◽

Author(s):

Kazuyuki Sakamoto ◽

Hirotaka Ishikawa ◽

Takashi Wake ◽

Chie Ishimoto ◽

Jun Fujii ◽

...

Keyword(s):

Topological Insulators ◽

Spatial Control ◽

Charge Doping

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Magnetic properties of (Nd,Ca)(Ba,La)Co2O5+δ tuned by the site-selected charge doping, oxygen disorder, and hydrostatic pressure

Physical Review Materials ◽

10.1103/physrevmaterials.1.064404 ◽

2017 ◽

Vol 1 (6) ◽

Cited By ~ 1

Author(s):

J. Pietosa ◽

S. Kolesnik ◽

R. Puzniak ◽

A. Wisniewski ◽

B. Poudel ◽

...

Keyword(s):

Magnetic Properties ◽

Hydrostatic Pressure ◽

Charge Doping

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Interface coupling and charge doping in graphene on ferroelectric BiAlO3(0001) polar surfaces

Physical Chemistry Chemical Physics ◽

10.1039/d0cp05742h ◽

2021 ◽

Vol 23 (5) ◽

pp. 3407-3416

Author(s):

Jin Yuan ◽

Jian-Qing Dai ◽

Cheng Ke ◽

Zi-Cheng Wei

Keyword(s):

Dft Calculations ◽

Hybrid System ◽

First Principles ◽

Doping Effect ◽

Coupling Mechanism ◽

Polarization Reversal ◽

Interface Coupling ◽

Polar Surfaces ◽

Charge Doping

The interface coupling mechanism, charge doping effect, and effect of polarization reversal in the graphene/BiAlO3(0001) hybrid system are explored by first-principles DFT calculations.

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