Electronic Raman scattering and infrared absorption spectra of shallow acceptors in ZnTe

1979 ◽  
Vol 19 (6) ◽  
pp. 3045-3052 ◽  
Author(s):  
S. Nakashima ◽  
T. Hattori ◽  
P. E. Simmonds ◽  
E. Amzallag
Keyword(s):  
Raman Scattering ◽  
Absorption Spectra ◽  
Infrared Absorption ◽  
Electronic Raman Scattering ◽  
Shallow Acceptors ◽  
Infrared Absorption Spectra

scholarly journals Спектроскопия комбинационного рассеяния, инфракрасного поглощения и люминесценции нитрида алюминия, легированного бериллием

2021 ◽  
Vol 55 (3) ◽  
pp. 251
Author(s):  
И.Д. Бреев ◽  
В.Д. Яковлева ◽  
О.С. Кудрявцев ◽  
П.Г. Баранов ◽  
Е.Н. Мохов ◽  
...  
Keyword(s):  
Optical Properties ◽  
High Temperature ◽  
Raman Scattering ◽  
Absorption Spectra ◽  
Electron Irradiation ◽  
Infrared Absorption ◽  
Spectral Properties ◽  
Spectral Lines ◽  
Yellow Color ◽  
Infrared Absorption Spectra

The high-temperature (T = 1880◦C) Be-ions diffusion and electron irradiation influence on the AlN monocrystals optical properties were investigated. We demonstrated that Be diffusion into AlN leads to spectral properties change of the Raman scattering and infrared absorption. The analysis of the Raman and infrared absorption spectra of the AlN crystals, containing Be impurity, proves that Be impurity is a getter for intrinsic impurities, which are responsible for AlN crystals yellow color manifestation and spectral lines broadening

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