Thermal phonon scattering at singlet-triplet donor states in cubic semiconductors

1985 ◽  
Vol 32 (12) ◽  
pp. 8234-8241 ◽  
Author(s):  
A. Puhl ◽  
E. Sigmund ◽  
J. Maier
Keyword(s):  
Phonon Scattering ◽  
Thermal Phonon ◽  
Donor States

Thermal phonon scattering in Li-doped Si

1974 ◽  
Vol 9 (6) ◽  
pp. 2530-2538 ◽  
Author(s):  
D. Fortier ◽  
K. Suzuki
Keyword(s):  
Phonon Scattering ◽  
Thermal Phonon

Electron Concentration and Mobility in Semimetallic CdO

1971 ◽  
Vol 49 (4) ◽  
pp. 435-440 ◽  
Author(s):  
F. P. Koffyberg
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Low Temperatures ◽  
Phonon Scattering ◽  
Hall Constant ◽  
Apparent Increase ◽  
Optical Phonon Scattering ◽  
Complete Ionization ◽  
Dominant Process ◽  
Donor States

Measurements of the Hall constant and mobility in the temperature range 81–1100 °K were carried out on n-type CdO single crystals with defect concentrations of 1.9–31.7 × 1018/cm3. Carrier concentrations were found to be independent of temperature, indicating complete ionization of the defect donors and semimetallic conduction. At high temperature the mobility appears to be limited by optical phonon scattering, while at low temperature ionized defect scattering is the dominant process. The apparent increase of the effective mass at low temperatures from 0.15 m0 to 0.45 m0 with increasing defect concentrations is ascribed to increasing nonparabolicity of the conduction band resulting from the addition of donor states to the band.

Effect of p donors on thermal phonon scattering in SI

1976 ◽  
Vol 37 (2) ◽  
pp. 143-147 ◽  
Author(s):  
D. Fortier ◽  
K. Suzuki
Keyword(s):  
Phonon Scattering ◽  
Thermal Phonon

Effect of internal strains on thermal-phonon scattering in Li-doped Si

1980 ◽  
Vol 21 (12) ◽  
pp. 5651-5655 ◽  
Author(s):  
A. Adolf ◽  
D. Fortier ◽  
J. H. Albany ◽  
K. Suzuki
Keyword(s):  
Phonon Scattering ◽  
Thermal Phonon ◽  
Internal Strains

Thermal Phonon Scattering in n-Ge. Effect of Uniaxial Stress

1980 ◽  
Vol 98 (2) ◽  
pp. 643-650 ◽  
Author(s):  
A. Kobayashi ◽  
K. Suzuki
Keyword(s):  
Phonon Scattering ◽  
Uniaxial Stress ◽  
Thermal Phonon

Towards quantitative simulations of inelastic electron diffraction patterns and images

1992 ◽  
Vol 50 (2) ◽  
pp. 1170-1171
Author(s):  
Z. L. Wang
Keyword(s):  
Phonon Scattering ◽  
Incident Beam ◽  
Dynamical Theory ◽  
Inelastic Electron ◽  
Additional Advantage ◽  
Coupled Equations ◽  
Atomic Vibrations ◽  
Diffraction Patterns ◽  
Primary Advantage ◽  
The One

A new dynamical theory has been developed based on Yoshioka's coupled equations for describing inelastic electron scattering in thin crystals. Compared to existing theories, the primary advantage of this theory is that the incoherent summation of the diffracted intensities contributed by electrons after exciting vast numbers of different excited states has been evaluated before any numerical calculation. An additional advantage is that the phase correlations of atomic vibrations are considered, so that full lattice dynamics can be combined in the phonon scattering calculation. The new theory has been proven to be equivalent to the inelastic multislice theory, and has been applied to calculate energy-filtered diffraction patterns and images formed by phonon, single electron and valence scattered electrons.A calculated diffraction pattern of elastic and phonon scattered electrons for a parallel incident beam case is in agreement with the one observed (Fig. 1), showing thermal diffuse scattering (TDS) streaks and Kikuchi pattern.

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