Effects of Magnetic Field and Uniaxial Stress on Thermal Phonon Scattering in n-Ge

Author(s):  
A. Kobayashi ◽  
K. Suzuki
1980 ◽  
Vol 98 (2) ◽  
pp. 643-650 ◽  
Author(s):  
A. Kobayashi ◽  
K. Suzuki

1974 ◽  
Vol 9 (6) ◽  
pp. 2530-2538 ◽  
Author(s):  
D. Fortier ◽  
K. Suzuki

2013 ◽  
Vol 82 (9) ◽  
pp. 094606 ◽  
Author(s):  
Zi-Wu Wang ◽  
Lei Liu ◽  
Lin Shi ◽  
Xiao-Jing Gong ◽  
Wei-Ping Li ◽  
...  

2006 ◽  
Vol 941 ◽  
Author(s):  
Francesco Dalla Longa ◽  
Dion Boesten ◽  
Harm H.J.E. Kicken ◽  
Wim J.M. de Jonge ◽  
Bert Koopmans

ABSTRACTA novel model for ultrafast laser-induced magnetization dynamics is analyzed. Equilibration of the magnetic system is described by including electron-phonon scattering events with a finite spin flip probability. Recently, we demonstrated that such a model predicts a direct relation between the demagnetization time and the Gilbert damping. Here we present numerical simulations based on the same Hamiltonian, but including the presence of an external applied field. Thereby, reversal of the magnetization after heating above the Curie temperature (Tc) can be modeled. We demonstrate that magnetization reversal can be achieved even if the lattice temperature stays below Tc.


Measurement ◽  
2012 ◽  
Vol 45 (5) ◽  
pp. 1239-1245 ◽  
Author(s):  
Shih-Kang Kuo ◽  
Sheng-Yang Lin ◽  
Chen-Yuan Lu

2009 ◽  
Vol 23 (12n13) ◽  
pp. 3019-3023 ◽  
Author(s):  
A. WYSMOŁEK ◽  
R. STĘPNIEWSKI ◽  
K. WARDAK ◽  
J. BARANOWSKI ◽  
M. POTEMSKI ◽  
...  

Magneto- and piezo-spectroscopy of high quality bulk samples have been used to clarify the origin of the characteristic, V1, V2 and V3 luminescence lines observed in 6 H - SiC polytypes, correspondingly, at 1.433, 1.398, and 1.368 eV. The uniaxial stress, up to 500 MPa, was applied along [11-20] and [10-10] directions, perpendicular to the c -axis of the investigated 6 H - SiC crystals. Magnetic field was applied in different directions with respect to the c -axis. The obtained results allow us to analyze in detail the symmetry of the initial and final states responsible for the V2 emission line. This analysis leads to a conclusion which contradicts the existing identification of the defect responsible for this characteristic emission.


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