Electron-phonon interaction and electron scattering by modified confined LO phonons in semiconductor quantum wells

Abstract The specific features of the interaction of charged particles with polar optical phonons have been studied theoretically for quantum wells with the barriers that are asymmetric in their dielectric properties. It is shown that the interaction with interface phonon modes makes the greatest contribution in narrow quantum wells. The parameters of the electron-phonon interaction were found for the cases of different values of the phonon frequencies in the barrier materials. It turned out that a significant (by almost an order of magnitude) change in the parameters of the electron-phonon interaction can occur in such structures. This makes it possible, in principle, to trace the transition from weak to strong interactions in quantum wells of the same type but with different compositions of barrier materials. The conditions are found under which an enhancement of the electron-phonon interaction is possible in an asymmetric structure in comparison with a symmetric one with the barriers of the same composition.

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Study of electron-phonon interaction in quantum wells using optically excited nonequilibrium population of phonons

Superlattices and Microstructures ◽

10.1006/spmi.1993.1039 ◽

1993 ◽

Vol 13 (2) ◽

pp. 203 ◽

Cited By ~ 18

Author(s):

Tobias Ruf ◽

Keith Wald ◽

Peter Y. Yu ◽

K.T. Tsen ◽

H. Morkoç ◽

...

Keyword(s):

Quantum Wells ◽

Phonon Interaction ◽

Electron Phonon Interaction

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Electron–Phonon Interaction in Quantum Wells Based on Uniaxial Materials

Semiconductors ◽

10.1134/s1063782619160164 ◽

2019 ◽

Vol 53 (12) ◽

pp. 1617-1621 ◽

Cited By ~ 1

Author(s):

A. Yu. Maslov ◽

O. V. Proshina

Keyword(s):

Quantum Wells ◽

Phonon Interaction ◽

Electron Phonon Interaction

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Wannier-Stark effect and electron-phonon interaction in macroporous silicon structures with SiO2 nanocoatings

Opto-Electronics Review ◽

10.2478/s11772-014-0199-6 ◽

2014 ◽

Vol 22 (4) ◽

Cited By ~ 4

Author(s):

L. Karachevtseva ◽

Yu. Goltviansky ◽

O. Kolesnyk ◽

O. Lytvynenko ◽

O. Stronska

Keyword(s):

Electron Scattering ◽

Stark Effect ◽

Oscillation Amplitude ◽

Level Energy ◽

Ir Absorption ◽

Macroporous Silicon ◽

Phonon Interaction ◽

Electron Phonon Interaction ◽

Silicon Structures ◽

Resonance Electron

AbstractWe investigated the contribution of electron-phonon interaction to the broadening parameter Γ of the Wannier-Stark ladder levels in oxidized macroporous silicon structures with different concentration of Si-O-Si states (TO and LO phonons). The obtained value of the Wannier-Stark ladder parameter Γ is much less than the djacent level energy evaluated from giant oscillations of resonance electron scattering on the surface states. We determined the influence of broadening on the oscillation amplitude in IR absorption spectra as interaction of the surface multi-phonon polaritons with scattered electrons. This interaction transforms the resonance electron scattering in samples with low concentration of Si-O-Si states into ordinary scattering on ionized impurities for samples with high concentration of Si-O-Si states. The transformation takes place at the scattering lifetime coinciding with the period of electron oscillations in the surface electric field.

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