Theory of the excitonic optical Stark effect in quasi-one-dimensional semiconductor quantum wires

1992 ◽  
Vol 46 (15) ◽  
pp. 9569-9576 ◽  
Author(s):  
Nguyen Ba An ◽  
Hartmut Haug
Keyword(s):  
Stark Effect ◽  
Quantum Wires ◽  
One Dimensional ◽  
Optical Stark Effect

The optical Stark effect in semiconductor quantum wires

2003 ◽  
Vol 310 (5-6) ◽  
pp. 460-464 ◽  
Author(s):  
Fanyao Qu ◽  
P.C Morais
Keyword(s):  
Stark Effect ◽  
Quantum Wires ◽  
Optical Stark Effect

scholarly journals Three-Level Optical Stark Effect of Excitons in GaAs Cylindrical Quantum Wires

2021 ◽  
Vol 2021 ◽  
pp. 1-10
Author(s):  
Dinh Nhu Thao ◽  
Duong Dinh Phuoc ◽  
Le Thi Ngoc Bao ◽  
Le Thi Dieu Hien ◽  
Tran Phan Thuy Linh ◽  
...  
Keyword(s):  
Stark Effect ◽  
Quantum Wires ◽  
Function Theory ◽  
Pump Laser ◽  
Strong Impact ◽  
Wire Radius ◽  
Exciton Absorption ◽  
Hole Level ◽  
Level Model ◽  
Optical Stark Effect

This study looks at the three-level optical Stark effect of excitons in GaAs cylindrical quantum wires, utilizing the renormalized wave function theory. By applying the three-level model consisting of the first two electron levels connected via a powerful pump laser and the first hole level, we observe the appearance of the excitonic optical Stark effect through the appearance of two separated peaks in the exciton absorption spectra. In addition, the strong impact of the pump laser detuning and the wire radius on the optical Stark effect are also put under thorough examination. Finally, a brief guidance for experimental verification is also suggested.

Coupled Double Optical Stark Effect in CdSe Colloidal Nanoplatelets

ACS Photonics ◽  
2021 ◽  
Vol 8 (3) ◽  
pp. 745-751
Author(s):  
Dongmei Xiang ◽  
Yulu Li ◽  
Lifeng Wang ◽  
Yang Zhao ◽  
Kaifeng Wu
Keyword(s):  
Stark Effect ◽  
Optical Stark Effect

scholarly journals Magneto-Optical Stark Effect in Fe-Doped CdS Nanocrystals

Nano Letters ◽  
2021 ◽  
Author(s):  
Mahima Makkar ◽  
Lakshay Dheer ◽  
Anjali Singh ◽  
Luca Moretti ◽  
Margherita Maiuri ◽  
...  
Keyword(s):  
Stark Effect ◽  
Cds Nanocrystals ◽  
Optical Stark Effect

Theory of the Optical Stark Effect in Semiconductors

1988 ◽  
Vol 150 (2) ◽  
pp. 407-412 ◽  
Author(s):  
W. Schäfer ◽  
K.-H. Schuldt ◽  
R. Binder
Keyword(s):  
Stark Effect ◽  
Optical Stark Effect

Quantum-confined Stark effect and phase-space exciton quenching in quantum wires

2003 ◽  
Author(s):  
H. Weman ◽  
E. Martinet ◽  
M.-A. Dupertuis ◽  
A. Rudra ◽  
A.M. Condo ◽  
...  
Keyword(s):  
Phase Space ◽  
Stark Effect ◽  
Quantum Wires ◽  
Quantum Confined Stark Effect ◽  
Quantum Confined

Magnetization of GaAs quantum wires with quasi one-dimensional electron systems

2004 ◽  
Vol 22 (1-3) ◽  
pp. 729-732 ◽  
Author(s):  
M.A Wilde ◽  
J.I Springborn ◽  
Ch Heyn ◽  
D Heitmann ◽  
D Grundler
Keyword(s):  
Quantum Wires ◽  
Electron Systems ◽  
Dimensional Electron ◽  
One Dimensional

Calculation of one-dimensional hot-electron mobility in GaAs quantum wires at microwave and millimeterwave frequencies

1996 ◽  
Vol 222 (1-3) ◽  
pp. 217-222 ◽  
Author(s):  
S.K. Sarkar ◽  
D. Chattopadhyay
Keyword(s):  
Electron Mobility ◽  
Quantum Wires ◽  
Hot Electron ◽  
One Dimensional

Optical stark effect of excitons in semiconductors

1987 ◽  
Vol 38 (1-6) ◽  
pp. 235-238 ◽  
Author(s):  
D. Fröhlich ◽  
K. Reimann ◽  
R. Wille
Keyword(s):  
Stark Effect ◽  
Optical Stark Effect

scholarly journals Quantum conductance staircase of holes in silicon nanosandwiches

2019 ◽  
Vol 20 (2) ◽  
pp. 81-98
Author(s):  
N. T. Bagraev ◽  
L. E. Klyachkin ◽  
A. M. Malyarenko ◽  
V. S. Khromov
Keyword(s):  
Kinetic Energy ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Energy Gap ◽  
Point Contact ◽  
Quantum Conductance ◽  
One Dimensional ◽  
Drastic Increase ◽  
Quantum Point ◽  
The One

The results of studying the quantum conductance staircase of holes in one−dimensional channels obtained by the split−gate method inside silicon nanosandwiches that are the ultra−narrow quantum well confined by the delta barriers heavily doped with boron on the n−type Si (100) surface are reported. Since the silicon quantum wells studied are ultra−narrow (~2 nm) and confined by the delta barriers that consist of the negative−U dipole boron centers, the quantized conductance of one−dimensional channels is observed at relatively high temperatures (T > 77 K). Further, the current−voltage characteristic of the quantum conductance staircase is studied in relation to the kinetic energy of holes and their sheet density in the quantum wells. The results show that the quantum conductance staircase of holes in p−Si quantum wires is caused by independent contributions of the one−dimensional (1D) subbands of the heavy and light holes; these contributions manifest themselves in the study of square−section quantum wires in the doubling of the quantum−step height (G0 = 4e2/h), except for the first step (G0 = 2e2/h) due to the absence of degeneracy of the lower 1D subband. An analysis of the heights of the first and second quantum steps indicates that there is a spontaneous spin polarization of the heavy and light holes, which emphasizes the very important role of exchange interaction in the processes of 1D transport of individual charge carriers. In addition, the field−related inhibition of the quantum conductance staircase is demonstrated in the situation when the energy of the field−induced heating of the carriers become comparable to the energy gap between the 1D subbands. The use of the split−gate method made it possible to detect the effect of a drastic increase in the height of the quantum conductance steps when the kinetic energy of holes is increased; this effect is most profound for quantum wires of finite length, which are not described under conditions of a quantum point contact. In the concluding section of this paper we present the findings for the quantum conductance staircase of holes that is caused by the edge channels in the silicon nanosandwiches prepared within frameworks of the Hall. This longitudinal quantum conductance staircase, Gxx, is revealed by the voltage applied to the Hall contacts, Vxy, to a maximum of 4e2/h. In addition to the standard plateau, 2e2/h, the variations of the Vxy voltage appear to exhibit the fractional forms of the quantum conductance staircase with the plateaus and steps that bring into correlation respectively with the odd and even fractional values.

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