Unified formulation of excitonic absorption spectra of semiconductor quantum wells, superlattices, and quantum wires

1993 ◽  
Vol 48 (23) ◽  
pp. 17308-17315 ◽  
Author(s):  
Pierre Lefebvre ◽  
Philippe Christol ◽  
Henry Mathieu
Keyword(s):  
Quantum Wells ◽  
Absorption Spectra ◽  
Quantum Wires ◽  
Excitonic Absorption ◽  
Semiconductor Quantum Wells

Response of excitonic absorption spectra to photoexcited carriers in GaAs quantum wells

1992 ◽  
Vol 46 (20) ◽  
pp. 13452-13460 ◽  
Author(s):  
D. R. Wake ◽  
H. W. Yoon ◽  
J. P. Wolfe ◽  
H. Morkoç
Keyword(s):  
Quantum Wells ◽  
Absorption Spectra ◽  
Excitonic Absorption

Characterization of GaAs/AlGaAs quantum wells and quantum wires by chemical lattice imaging

1994 ◽  
Vol 52 ◽  
pp. 736-737
Author(s):  
A. Carlsson ◽  
J.-O. Malm ◽  
A. Gustafsson
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Wires ◽  
Vapour Phase ◽  
Quantitative Information ◽  
Lattice Imaging ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy ◽  
High Resolution Images

In this study a quantum well/quantum wire (QW/QWR) structure grown on a grating of V-grooves has been characterized by a technique related to chemical lattice imaging. This technique makes it possible to extract quantitative information from high resolution images.The QW/QWR structure was grown on a GaAs substrate patterned with a grating of V-grooves. The growth rate was approximately three monolayers per second without growth interruption at the interfaces. On this substrate a barrier of nominally Al0.35 Ga0.65 As was deposited to a thickness of approximately 300 nm using metalorganic vapour phase epitaxy . On top of the Al0.35Ga0.65As barrier a 3.5 nm GaAs quantum well was deposited and to conclude the structure an additional approximate 300 nm Al0.35Ga0.65 As was deposited. The GaAs QW deposited in this manner turns out to be significantly thicker at the bottom of the grooves giving a QWR running along the grooves. During the growth of the barriers an approximately 30 nm wide Ga-rich region is formed at the bottom of the grooves giving a Ga-rich stripe extending from the bottom of each groove to the surface.

Microcavities

2017 ◽  
Author(s):  
Alexey V. Kavokin ◽  
Jeremy J. Baumberg ◽  
Guillaume Malpuech ◽  
Fabrice P. Laussy
Keyword(s):  
Quantum Wells ◽  
Strong Light ◽  
Fundamental Physics ◽  
Postgraduate Students ◽  
Optical Cavities ◽  
Semiconductor Quantum Wells ◽  
Exciton Polaritons ◽  
Different Types ◽  
Potential Applications ◽  
Experimental Findings

Both rich fundamental physics of microcavities and their intriguing potential applications are addressed in this book, oriented to undergraduate and postgraduate students as well as to physicists and engineers. We describe the essential steps of development of the physics of microcavities in their chronological order. We show how different types of structures combining optical and electronic confinement have come into play and were used to realize first weak and later strong light–matter coupling regimes. We discuss photonic crystals, microspheres, pillars and other types of artificial optical cavities with embedded semiconductor quantum wells, wires and dots. We present the most striking experimental findings of the recent two decades in the optics of semiconductor quantum structures. We address the fundamental physics and applications of superposition light-matter quasiparticles: exciton-polaritons and describe the most essential phenomena of modern Polaritonics: Physics of the Liquid Light. The book is intended as a working manual for advanced or graduate students and new researchers in the field.

Fractional-dimensional excitonic absorption theory applied toV-groove quantum wires

2004 ◽  
Vol 70 (15) ◽  
Author(s):  
K. F. Karlsson ◽  
M.-A. Dupertuis ◽  
H. Weman ◽  
E. Kapon
Keyword(s):  
Quantum Wires ◽  
Excitonic Absorption ◽  
Absorption Theory
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