Estimation of the free-charge-carrier concentration in fast-ion conductingNa2S-B2S3glasses from an analysis of the frequency-dependent conductivity

1994 ◽  
Vol 50 (18) ◽  
pp. 13259-13266 ◽  
Author(s):  
Ernest F. Hairetdinov ◽  
Nikolai F. Uvarov ◽  
Hitendra K. Patel ◽  
Steve W. Martin
Keyword(s):  
Charge Carrier ◽  
Carrier Concentration ◽  
Free Charge Carrier ◽  
Charge Carrier Concentration ◽  
Free Charge ◽  
Frequency Dependent ◽  
Frequency Dependent Conductivity ◽  
Fast Ion

Giant enhancement of free charge carrier concentration in boron-doped amorphous hydrogenated silicon under femtosecond laser crystallization

2018 ◽  
Vol 113 (20) ◽  
pp. 203103 ◽  
Author(s):  
Alexander V. Pavlikov ◽  
Pavel A. Forsh ◽  
Sergey E. Svyakhovskiy ◽  
Anna N. Matsukatova ◽  
Ekaterina A. Forsh ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Charge Carrier ◽  
Carrier Concentration ◽  
Free Charge Carrier ◽  
Charge Carrier Concentration ◽  
Free Charge ◽  
Laser Crystallization ◽  
Hydrogenated Silicon ◽  
Boron Doped ◽  
Amorphous Hydrogenated Silicon

Electrical conductivity and thermo-electric power of a-Se80–xInx and Se80–xGe20Inx thin films

2002 ◽  
Vol 80 (1) ◽  
pp. 19-27 ◽  
Author(s):  
Z H Khan ◽  
M Zulfeqaur ◽  
A Kumar ◽  
M Husain
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Charge Carrier ◽  
Electric Power ◽  
Carrier Concentration ◽  
Free Charge Carrier ◽  
Charge Carrier Concentration ◽  
Dc Conductivity ◽  
Free Charge ◽  
Thermo Electric

The dc conductivity and thermo-electric power of a-Se80–xInx (x = 5, 10, 15, 20, 30) and a-Se80–xGe20Inx (x = 0, 5, 10, 15, 20) thin films are reported in the present work. The free-charge-carrier concentration is calculated with the help of dc conductivity and thermo-electric power measurements. The calculated values of the free-charge-carrier concentration have been used to evaluate the free-charge-carrier mobility from which the grain boundary potential was evaluated. The results are interpreted in terms of band tailing and the structure of Se–In, Se–Ge–In, and the grain boundary potential barrier. PACS Nos.: 73.61-p, 61.43Dq

scholarly journals Critical View on Buffer Layer Formation and Monolayer Graphene Properties in High-Temperature Sublimation

2021 ◽  
Vol 11 (4) ◽  
pp. 1891
Author(s):  
Vallery Stanishev ◽  
Nerijus Armakavicius ◽  
Chamseddine Bouhafs ◽  
Camilla Coletti ◽  
Philipp Kühne ◽  
...  
Keyword(s):  
High Temperature ◽  
Charge Carrier ◽  
Buffer Layer ◽  
Free Charge Carrier ◽  
Monolayer Graphene ◽  
Free Charge ◽  
Layer Formation ◽  
Free Hole ◽  
Sublimation Growth ◽  
Insulating Substrates

In this work we have critically reviewed the processes in high-temperature sublimation growth of graphene in Ar atmosphere using closed graphite crucible. Special focus is put on buffer layer formation and free charge carrier properties of monolayer graphene and quasi-freestanding monolayer graphene on 4H–SiC. We show that by introducing Ar at higher temperatures, TAr, one can shift the formation of the buffer layer to higher temperatures for both n-type and semi-insulating substrates. A scenario explaining the observed suppressed formation of buffer layer at higher TAr is proposed and discussed. Increased TAr is also shown to reduce the sp3 hybridization content and defect densities in the buffer layer on n-type conductive substrates. Growth on semi-insulating substrates results in ordered buffer layer with significantly improved structural properties, for which TAr plays only a minor role. The free charge density and mobility parameters of monolayer graphene and quasi-freestanding monolayer graphene with different TAr and different environmental treatment conditions are determined by contactless terahertz optical Hall effect. An efficient annealing of donors on and near the SiC surface is suggested to take place for intrinsic monolayer graphene grown at 2000 ∘C, and which is found to be independent of TAr. Higher TAr leads to higher free charge carrier mobility parameters in both intrinsically n-type and ambient p-type doped monolayer graphene. TAr is also found to have a profound effect on the free hole parameters of quasi-freestanding monolayer graphene. These findings are discussed in view of interface and buffer layer properties in order to construct a comprehensive picture of high-temperature sublimation growth and provide guidance for growth parameters optimization depending on the targeted graphene application.

The influence of composition on polymorphism, structure and charge carrier concentration in TL-2201.

1994 ◽  
Vol 235-240 ◽  
pp. 539-540
Author(s):  
C. Ström ◽  
S.-G. Eriksson ◽  
J. Albertsson ◽  
N. Winzek
Keyword(s):  
Charge Carrier ◽  
Carrier Concentration ◽  
Charge Carrier Concentration

Selective observation of transverse optical phonons of Au modes to evaluate free charge carrier parameters in β-Ga2O3 substrate and homoepitaxial film

2021 ◽  
Vol 118 (25) ◽  
pp. 252101
Author(s):  
Takeyoshi Onuma ◽  
Kohei Sasaki ◽  
Tomohiro Yamaguchi ◽  
Tohru Honda ◽  
Akito Kuramata ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Free Charge Carrier ◽  
Transverse Optical ◽  
Optical Phonons ◽  
Free Charge ◽  
Homoepitaxial Film

Infrared Diagnostics of Free Charge Carriers in Silicon Nanowires

2019 ◽  
Vol 18 (03n04) ◽  
pp. 1940030 ◽  
Author(s):  
A. I. Efimova ◽  
E. A. Lipkova ◽  
K. A. Gonchar ◽  
A. A. Eliseev ◽  
V. Yu. Timoshenko
Keyword(s):  
Silicon Nanowires ◽  
Crystalline Silicon ◽  
Free Charge Carrier ◽  
Charge Carrier Concentration ◽  
Attenuated Total Reflection ◽  
Free Charge ◽  
Cross Sectional ◽  
Text Type ◽  
Cross Sectional Size ◽  
Potential Applications

Free charge carrier concentration in arrays of silicon nanowires (SiNWs) with cross-sectional size of the order of 100[Formula: see text]nm was quantitatively studied by means of the infrared spectroscopy in an attenuated total reflection mode. SiNWs were formed on lightly-doped [Formula: see text]-type crystalline silicon substrates by metal-assisted chemical etching followed by additional doping through thermoactivated diffusion of boron at 900–1000∘C. The latter process was found to increase the concentration of free holes in SiNWs up to [Formula: see text][Formula: see text]cm[Formula: see text]. Potential applications of highly doped SiNWs in thermoelectric energy converters and infrared plasmonic devices are discussed.

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