Interfacial-roughness effects on giant magnetoresistance and interlayer coupling in Co/Cu superlattices

1995 ◽  
Vol 52 (6) ◽  
pp. 4263-4274 ◽  
Author(s):  
Z. J. Yang ◽  
M. R. Scheinfein

2000 ◽  
Vol 87 (6) ◽  
pp. 3023-3026 ◽  
Author(s):  
D. C. Parks ◽  
P. J. Chen ◽  
W. F. Egelhoff ◽  
Romel D. Gomez


1995 ◽  
Vol 52 (1) ◽  
pp. 361-365 ◽  
Author(s):  
Motofumi Suzuki ◽  
Yasunori Taga


1997 ◽  
Vol 81 (8) ◽  
pp. 4589-4591 ◽  
Author(s):  
Yuansu Luo ◽  
Michael Moske ◽  
Andrea Kaeufler ◽  
Tilmann Lorenz ◽  
Konrad Samwer




1994 ◽  
Vol 33 (Part 1, No. 11) ◽  
pp. 6173-6178 ◽  
Author(s):  
Haruhisa Ueda ◽  
Osamu Kitakami ◽  
Yutaka Shimada ◽  
Yoshinori Goto ◽  
Masaki Yamamoto


1993 ◽  
Vol 48 (21) ◽  
pp. 15755-15763 ◽  
Author(s):  
Eric E. Fullerton ◽  
M. J. Conover ◽  
J. E. Mattson ◽  
C. H. Sowers ◽  
S. D. Bader


2000 ◽  
Vol 97 (3) ◽  
pp. 495-498 ◽  
Author(s):  
G. Palasantzas ◽  
J. Barnaś ◽  
J.Th.M. De Hosson


1995 ◽  
Vol 213-214 ◽  
pp. 248-250 ◽  
Author(s):  
M. Takeda ◽  
Y. Endoh ◽  
A. Kamijo ◽  
J. Mizuki


2006 ◽  
Vol 6 (11) ◽  
pp. 3483-3486
Author(s):  
Chunghee Nam ◽  
Youngman Jang ◽  
Ki-Su Lee ◽  
Jungjin Shim ◽  
B. K. Cho

We have studied the influence of the insertion of a nano-oxide layer (NOL) into a magnetic GMR spin-valve. It was found that the spin-valve with NOL has a higher GMR ratio than that of the normal spin-valve without NOL. Naturally formed NOL without vacuum break shows a uniform layer, which effectively suppresses the current shunt, resulting in the reduction of the sheet resistance of GMR. The NOL spin-valve also shows a lower interlayer coupling (Hin) than that of the optimal normal spin-valve, which is consistent with AFM measurement showing lower roughness of NOL formed CoFe surface. Based on the advantage of NOL, we succeeded in lowering Hin while maintaining GMR ratio by insertion of NOL inside the CoFe free layer, where the free layer consists of CoFe/NOL/CoFe/NOL/Capping layer.



2021 ◽  
Author(s):  
Yongjian Zhou ◽  
Liyang Liao ◽  
Tingwen Guo ◽  
Hua Bai ◽  
Mingkun Zhao ◽  
...  

Abstract The interlayer coupling of two ferromagnetic layers results in found of giant magnetoresistance, which forms the foundation of spintronics and accelerates the development of information technology. Compared with ferromagnets, antiferromagnets (AFMs) possess huge potential in ultrafast and high-density data processing and information storage because of their terahertz spin dynamics and subtle stray field. The interlayer coupling in AFMs has long been neglected, because the collinear parallel and antiparallel arrangements of AFMs are indistinguishable. However, the noncollinear interlayer coupling in AFMs is detectable, and can be a potential candidate for practical antiferromagnetic spintronic devices. Here we demonstrate orthogonal interlayer coupling at room temperature in an all-antiferromagnetic junction Fe2O3/Cr2O3/Fe2O3, where the Néel vectors in the top and bottom functional materials Fe2O3 are strongly orthogonally coupled and the coupling strength of which is significantly affected by the thickness of the antiferromagnetic Cr2O3 spacer. From the energy and symmetry analysis, the direct coupling via uniform magnetic ordering is excluded. The coupling is proposed to be mediated by quasi-long range order in the spacer. Besides the fundamental significance, the strong coupling in an antiferromagnetic junction makes it a promising building block for practical antiferromagnetic spintronics with high-speed operation and ultrahigh-density integration.



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